参数资料
| 型号： | P850-U260-WHX |
| 厂商： | Bourns Inc. |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 描述： | CIRCT PROT ETH 260MA 850VIMP TBU |
| 标准包装： | 40 |
| 系列： | TBU™ |
| 电压 - 工作： | 425V |
| 技术： | 混合技术 |
| 电路数： | 2 |
| 应用： | 以太网 |
| 封装/外壳： | 0.305" L x 0.246" W x 0.033" H（7.75mm x 6.25mm x 0.85mm） |
| 供应商设备封装： | 6-DFN（6.25x7.75） |
| 包装： | 管件 |
| 工具箱： | TBU-DESIGNKIT-ND - KIT SURGE SUPP 18DEVICES 10EACH |
P650-U and P850-U Series TBU ? High-Speed Protectors
Product Dimensions
B
C
J
E
L
K
F
G
J
N
Dim.
A
Min.
6.15
(.242)
Typ.
6.25
(.246)
Max.
6.35
(.250)
4
5
6
H
B
7.65
(.301)
7.75
(.305)
7.85
(.309)
A
C
0.80
(.031)
0.85
(.033)
0.90
(.035)
3
2
1
H
P
D
0.000
(.000)
0.025
(.001)
0.050
(.002)
E
0.50
(.020)
0.55
(.022)
0.60
(.024)
PIN 1
TOP VIEW
Recommended Pad Layout
D
SIDE VIEW
BOTTOM VIEW
N
F
G
1.20
(.047)
4.20
(.165)
1.25
(.049)
4.25
(.167)
1.30
(.051)
4.30
(.169)
2.525
(.099)
0.50
(.020)
0.575
(.023)
1.25
(.049)
0.70
(.028)
4.275
(.168)
Pad Designation
Pad # Apply
1 In1
2 NC
3 Out1
H
J
K
2.45
(.096)
0.20
(.008)
0.45
(.018)
2.50
(.098)
0.25
(.010)
0.50
(.020)
2.55
(.100)
0.30
(.012)
0.55
(.022)
0.375
(.015)
4 Out2
5 NC
6 In2
L
N
0.65
(.026)
0.20
(.008)
0.70
(.028)
0.25
(.010)
0.75
(.030)
0.30
(.012)
NC = Solder to PCB; do not make electrical
connection, do not connect to ground.
TBU ? devices have matte-tin termination ?nish. Suggested layout should use non-solder mask
de?ne (NSMD). Recommended stencil thickness is 0.10-0.12 mm (.004-.005 in.) with stencil
opening size 0.025 mm (.0010 in.) less than the device pad size. As when heat sinking any power
device, it is recommended that, wherever possible, extra PCB copper area is allowed. For mini-
mum parasitic capacitance, do not allow any signal, ground or power signals beneath any of the
P
Q
0.70
(.028)
3.20
(.126)
DIMENSIONS:
0.75
(.030)
3.25
(.128)
MM
(INCHES)
0.80
(.031)
3.30
(.130)
pads of the device.
Block Diagram
Thermal Resistances
6
4
Symbol
Parameter
Value
Unit
Junction to leads (package)
105
°C/W
1
3
R th(j-a)
Junction to leads (per TBU ? device)
202
°C/W
Line
Side
TBU ? Device
Load
Side
Re?ow Pro?le
Pro?le Feature
Average Ramp-Up Rate (Tsmax to Tp)
Preheat
- Temperature Min. (Tsmin)
- Temperature Max. (Tsmax)
- Time (tsmin to tsmax)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classi?cation Temperature (Tp)
Time within 5 °C of Actual Peak Temp. (tp)
Ramp-Down Rate
Pb-Free Assembly
3 °C/sec. max.
150 °C
200 °C
60-180 sec.
217 °C
60-150 sec.
260 °C
20-40 sec.
6 °C/sec. max.
Time 25 °C to Peak Temperature
8 min. max.
Speci?cations are subject to change without notice.
Customers should verify actual device performance in their speci?c applications.
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