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参数资料
| 型号： | PA28F800B5B90 |
| 厂商： | INTEL CORP |
| 元件分类： | PROM |
| 英文描述： | SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| 中文描述： | 1M X 8 FLASH 5V PROM, 90 ns, PDSO44 |
| 封装： | 0.525 X 1.110 INCH, PLASTIC, SOP-44 |
| 文件页数： | 8/38页 |
| 文件大小： | 501K |
| 代理商： | PA28F800B5B90 |
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SMART 5 BOOT BLOCK MEMORY FAMILY
E
8
ADVANCE INFORMATION
Table 2. Pin Descriptions
(Continued)
Symbol
Type
Name and Function
WP#
INPUT
WRITE PROTECT:
Provides a method for unlocking the boot block with a logic
level signal in a system without a 12 V supply.
When WP# is at logic low, the boot block is locked
, preventing program and
erase operations to the boot block. If a program or erase operation is attempted
on the boot block when WP# is low, the corresponding status bit (bit 4 for
program, bit 5 for erase) will be set in the status register to indicate the operation
failed.
When WP# is at logic high, the boot block is unlocked
and can be
programmed or erased.
NOTE:
This feature is overridden and the boot block unlocked when RP# is at
V
. This pin can not be left floating. Because the 8-Mbit 44-PSOP package does
not have enough pins, it does not include this pin and thus 12 V on RP# is
required to unlock the boot block. See Section 3.3 for details on write protection.
BYTE#
INPUT
BYTE# ENABLE:
Configures whether the device operates in byte-wide mode (x8)
or word-wide mode (x16). This pin must be set at power-up or return from deep
power-down and not changed during device operation. BYTE# pin must be
controlled at CMOS levels to meet the CMOS current specification in standby
mode.
When BYTE# is at logic low, the byte-wide mode is enabled
, where data is
read and programmed on DQ
0
–DQ
7
and DQ
15
/A
–1
becomes the lowest order
address that decodes between the upper and lower byte. DQ
8
–DQ
14
are tri-stated
during the byte-wide mode.
When BYTE# is at logic high, the word-wide mode is enabled
, where data is
read and programmed on DQ
0
–DQ
15
.
Not applicable to 28F004B5.
V
CC
DEVICE POWER SUPPLY:
5.0 V
±
10%
V
PP
PROGRAM/ERASE POWER SUPPLY:
For erasing memory array blocks or
programming data in each block, a voltage either of 5 V
±
10% or 12 V
±
5% must
be applied to this pin. When V
PP
< V
PPLK
all blocks are locked and protected
against Program and Erase commands.
GND
GROUND:
For all internal circuitry.
NC
NO CONNECT:
Pin may be driven or left floating.
2.2
Pinouts
Intel’s Smart 5 boot block architecture provides
upgrade paths in each package pinout up to the
8-Mbit density. The 44-lead PSOP pinout follows
the industry-standard ROM/EPROM pinout, as
shown in
Figure 1. Designs with space concerns
should consider the 48-lead pinout shown in
Figure 2. Applications using an 8-bit bus can use
the 40-lead TSOP, which is available for the 4-Mbit
device only.
Pinouts for the corresponding 2-, 4-, and 8-Mbit
components are provided on the same diagram for
convenient reference. 2-Mbit pinouts are given on
the chip illustration in the center, with 4-Mbit and
8-Mbit pinouts going outward from the center.
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| PA28F200B5T60 | SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| PA28F400B5T60 | SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| PA28F800B5T70 | SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| PA28F200B5T80 | SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| PA28F400B5T80 | SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PA28F800B5T70 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| PA28F800B5T90 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT |
| PA28F800BVB120 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F800BV-B60 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| PA28F800BVB70 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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