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参数资料
| 型号： | PA45 |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | HIGH VOLTAGE POWER OPERATIONAL AMPLIFIER |
| 中文描述： | 高压功率运算放大器 |
| 文件页数： | 2/4页 |
| 文件大小： | 58K |
| 代理商： | PA45 |
APEX MICROTECHNOLOGY CORPORATION
5980 NORTH SHANNON ROAD TUCSON, ARIZONA 85741 USA APPLICATIONS HOTLINE: 1 (800) 546-2739
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
PA45
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +V
to –V
OUTPUT CURRENT, continuous within SOA
POWER DISSIPATION, continuous @ T
C
= 25
°
C
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, pin solder – 10 sec
TEMPERATURE, junction
TEMPERATURE, storage
TEMPERATURE RANGE, powered (case)
150V
5A
85W
±
16 V
±
V
S
300
°
C
150
°
C
–65 to +150
°
C
–55 to +125
°
C
PARAMETER
TEST CONDITIONS
1
MIN
TYP
MAX
UNITS
INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
OFFSET VOLTAGE, vs supply
OFFSET VOLTAGE, vs time
BIAS CURRENT, initial
BIAS CURRENT, vs supply
OFFSET CURRENT, initial
INPUT IMPEDANCE, DC
INPUT CAPACITANCE
COMMON MODE, voltage range
COMMON MODE REJECTION, DC
NOISE, broad band
5
10
8
10
50
15
2
100
2
200
mV
μ
V/
°
C
μ
V/V
μ
V
√
kh
pA
pA/V
pA
pF
V
dB
μ
V RMS
Full temperature range
20
10
11
5
±
V
–10
90
106
10
10kHz BW, R
S
= 1K
GAIN
OPEN LOOP at 15Hz
GAIN BANDWIDTH PRODUCT @ 1MHz
POWER BANDWIDTH
PHASE MARGIN
94
106
4.5
66
60
dB
MHz
kHz
°
R
L
= 500
, C
= 10pF
C
= 10pF, 130V p-p, R
= 8
Full temp range, C
C
= 68pF, R
L
= 10
OUTPUT
VOLTAGE SWING
CURRENT, continuous
SETTLING TIME to .1%
SLEW RATE
CAPACITIVE LOAD
RESISTANCE, no load
I
O
= 5A
±
V
S
–10
5
±
V
S
–8
V
A
μ
s
V/
μ
s
nF
10V step, A
V
= –10
C
C
= 10pF, R
= 8
A
V
= +1, C
C
= 68pF
R
CL
= 0
2
27
10
150
POWER SUPPLY
VOLTAGE
3
CURRENT, quiescent
See Note 3
±
15
±
50
30
±
75
50
V
mA
THERMAL
2
RESISTANCE, AC junction to case
RESISTANCE, DC junction to case
RESISTANCE, junction to air
TEMPERATURE RANGE, case
F > 60Hz
F < 60Hz
Full temperature range
Meets full range specifications
1.3
1.5
°
C/W
°
C/W
°
C/W
°
C
30
–25
+85
SPECIFICATIONS
CAUTION
The PA45 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850
°
C to avoid generating toxic fumes.
NOTES: 1.
Unless otherwise noted T
C
= 25
°
C, C
C
= 10pF, R
C
= 1K
. DC input specifications are
±
value given. Power supply voltage is
typical rating.
Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
to achieve high MTTF. For guidance, refer to heatsink data sheet.
Derate maximum supply voltage .5 V/
°
C below case temperature of 25
°
C. No derating is needed above T
C
= 25
°
C.
2.
3.
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