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参数资料
| 型号： | PA806C03 |
| 英文描述： | SCHOTTKY DIODE |
| 中文描述： | 肖特基二极管 |
| 文件页数： | 2/3页 |
| 文件大小： | 55K |
| 代理商： | PA806C03 |
PA806C03 (30A)
(30V / 30A )
Characteristics
0.1
1
10
100
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Tj=150
o
C
Tj=125
o
C
Tj=100
o
C
Tj=25
o
C
Forward Characteristic (typ.)
I
VF Forward Voltage (V)
0
5
10
15
20
25
30
35
40
10
-3
10
-2
10
-1
10
0
10
1
10
2
Reverse Characteristic (typ.)
Tj= 25
o
C
Tj=100
o
C
Tj=125
o
C
Tj=150
o
C
I
VR Reverse Voltage (V)
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
Per 1element
DC
Square wave
λ
=180
o
Sine wave
λ
=180
o
Square wave
λ
=120
o
Square wave
λ
=60
o
Forward Power Dissipation
W
Io Average Forward Current (A)
360°
Io
λ
0
5
10
15
20
25
30
35
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Reverse Power Dissipation
α
=180
o
DC
P
VR Reverse Voltage (V)
360°
VR
α
0
5
10
15
20
25
30
35
40
45
100
105
110
115
120
125
130
135
140
145
150
155
160
λ
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ
=120
o
Square wave
λ
=60
o
Square wave
λ
=180
Sine wave
λ
=180
o
o
DC
Current Derating (Io-Tc)
T
o
C
Io Average Output Current (A)
VR=20V
360°
λ
Io
1
10
100
100
1000
Junction Capacitance Characteristic (typ.)
C
VR Reverse Voltage (V)
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