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参数资料
| 型号： | PB50 |
| 厂商： | APEX MICROTECHNOLOGY CORP |
| 元件分类： | 模拟信号调理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, MBFM8 |
| 封装： | HERMETIC SEALED, TO-3, 8 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 255K |
| 代理商： | PB50 |
APEX MICROTECHNOLOGY CORPORATION 5980 NORTH SHANNON ROAD TUCSON, ARIZONA 85741 USA APPLICATIONS HOTLINE: 1 (800) 546-2739
2
PB50
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +V
S to –VS
200V
OUTPUT CURRENT, within SOA
2A
POWER DISSIPATION, internal at T
C = 25°C
1
35W
INPUT VOLTAGE, referred to common
±15V
TEMPERATURE, pin solder—10 sec max
300°C
TEMPERATURE, junction1
150°C
TEMPERATURE, storage
–65 to +150°C
OPERATING TEMPERATURE RANGE, case
–55 to +125°C
SPECIFICATIONS
PARAMETER
TESTCONDITIONS2
MIN
TYP
MAX
UNITS
INPUT
OFFSET VOLTAGE, initial
±.75
±1.75
V
OFFSET VOLTAGE, vs. temperature
Full temperature range
–4.5
–7
mV/°C
INPUT IMPEDANCE, DC
25
50
kΩ
INPUT CAPACITANCE
3
pF
CLOSED LOOP GAIN RANGE
3
10
25
V/V
GAIN ACCURACY, internal Rg, Rf
A
V = 3
±10
±15
%
GAIN ACCURACY, external Rf
A
V = 10
±15
±25
%
PHASE SHIFT
F = 10kHz, AV
CL = 10, CC = 22pF
10
°
F = 200kHz, AV
CL = 10, CC = 22pF
60
°
OUTPUT
VOLTAGE SWING
Io = 2A
V
S–11
V
S –9
V
VOLTAGE SWING
Io = 1A
V
S–10
V
S –7
V
VOLTAGE SWING
Io = .1A
V
S–8
V
S –5
V
CURRENT, continuous
2
A
SLEW RATE
Full temperature range
50
100
V/s
CAPACITIVE LOAD
Full temperature range
2200
pF
SETTLING TIME to .1%
R
L = 100Ω, 2V step
2
s
POWER BANDWIDTH
V
C = 100Vpp
160
320
kHz
SMALL SIGNAL BANDWIDTH
C
C = 22pF, AV = 25, Vcc = ±100
100
kHz
SMALL SIGNAL BANDWIDTH
C
C = 22pF, AV = 3, Vcc = ±30
1
MHz
POWERSUPPLY
VOLTAGE, ±V
S
3
Full temperature range
±305
±60
±100
V
CURRENT, quiescent
V
S = ±30
9
12
mA
V
S = ±60
12
18
mA
V
S = ±100
17
25
mA
THERMAL
RESISTANCE, AC junction to case4
Full temp. range, F > 60Hz
1.8
2.0
°C/W
RESISTANCE, DC junction to case
Full temp. range, F < 60Hz
3.2
3.5
°C/W
RESISTANCE, junction to air
Full temperature range
30
°C/W
TEMPERATURE RANGE, case
Meets full range specifications
–25
25
85
°C
NOTES: 1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to
achieve high MTTF (Mean Time to Failure).
2. The power supply voltage specified under typical (TYP) applies, T
C = 25°C unless otherwise noted.
3. +V
S and –VS denote the positive and negative supply rail respectively.
4. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz.
5. +V
S must be at least 15V above COM, –VS must be at least 30V below COM.
The PB50 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
CAUTION
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