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参数资料
| 型号： | PBHV8540Z |
| 元件分类： | 开关 |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件页数： | 1/7页 |
| 文件大小： | 525K |
| 代理商： | PBHV8540Z |
A-78
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Distinctive features
A
K
Approval and lists
CECC 96201-005
CECC 96201-008
MUAHAG and QPL listed (Europe only)
French defence approved : DAT list No A5999 X001.
This range of professional toggle switches is suitable for use in military and
other high specification environments.
K
Contacts
Highly reliable contacts suitable for low level applications (10mA 50mV -
10A 5VDC min.) or power applications (2A 250VAC - 4A 125VAC -
4A 30VDC max.)
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Pinned lever
The base of the switch lever is pinned to the bushing, thus earthing the lever to
the bushing. This also provides strain relief to protect the switch if accidentally
knocked.
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Double shell case
For high mechanical strength and high electrical insulation.
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Compact size
The small rear end of the switch allows space saving behind the panel.
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Finish
Matt black finish on body, bushing, lever and hardware.
K
Sealing
Panel sealed to IP 67, these switches are frontal sealed by two O-rings and
have full rear end sealing.
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Accessories
A comprehensive range of protection boots (both full and half length), locking
levers and security caps are available.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PBHV8540Z T/R | 功能描述:两极晶体管 - BJT TRANS HV BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PBHV8540Z,115 | 功能描述:两极晶体管 - BJT TRANS HV BISS TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PBHV8540Z115 | 制造商:NXP Semiconductors 功能描述:BISS TRANSISTOR HIGH VOLTAGE NPN 400V |
| PBHV8550Z,115 | 功能描述:两极晶体管 - BJT Single NPN 500V 0.4A 1700mW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| PBHV8560ZX | 功能描述:IC TRANS NPN 600V 0.5A SC73 制造商:nexperia usa inc. 系列:- 包装:剪切带（CT） 零件状态:在售 晶体管类型:NPN 电流 - 集电极（Ic）（最大值）:500mA 电压 - 集射极击穿（最大值）:600V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:100mV @ 5mA，50mA 电流 - 集电极截止（最大值）:100nA 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 50mA，10V 功率 - 最大值:650mW 频率 - 跃迁:- 工作温度:150°C（TJ） 安装类型:表面贴装 封装/外壳:TO-261-4，TO-261AA 供应商器件封装:SOT-223 标准包装:1 |
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