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参数资料
| 型号： | PBRP123ET,215 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-263AB |
| 封装： | PLASTIC, SMD, 3 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 112K |
| 代理商： | PBRP123ET,215 |
1.
Product prole
1.1 General description
800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
NPN complement: PBRN123ET.
1.2 Features
1.3 Applications
1.4 Quick reference data
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 1 cm2.
[2]
Device mounted on a ceramic PCB, Al2O3, standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.2 k
, R2 = 2.2 k
Rev. 01 — 16 January 2008
Product data sheet
I 800 mA repetitive peak output current
I Low collector-emitter saturation voltage
VCEsat
I High current gain hFE
I Reduces component count
I Built-in bias resistors
I Reduces pick and place costs
I Simplies circuit design
I ±10 % resistor ratio tolerance
I Digital application in automotive and
industrial segments
I Switching loads
I Medium current peripheral driver
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter voltage
open base
-
40
V
IO
output current
[1][2] --
600
mA
IORM
repetitive peak output current
tp ≤ 1 ms;
δ≤ 0.33
[3] --
800
mA
R1
bias resistor 1 (input)
1.54
2.2
2.86
k
R2/R1
bias resistor ratio
0.9
1
1.1
相关PDF资料 |
PDF描述 |
|---|---|
| PBRP123YT,215 | PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd |
| PBRV-16.0HRY-TOL1 | CERAMIC RESONATOR, 16 MHz |
| PBRV-FREQ2HRZ-TOL1 | CERAMIC RESONATOR, 8.01 MHz - 20 MHz |
| PBRV-20.0HRY-TOL2 | CERAMIC RESONATOR, 20 MHz |
| PBRV-6.00HRZ-TOL2 | CERAMIC RESONATOR, 6 MHz |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PBRP123YS,126 | 功能描述:开关晶体管 - 偏压电阻器 BISS RETS RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| PBRP123YT | 制造商:NXP Semiconductors 功能描述:TRANSISTORPNPW/RES40V0.8ASOT23 制造商:NXP Semiconductors 功能描述:TRANSISTOR,PNP,W/RES,40V,0.8A,SOT23 制造商:NXP Semiconductors 功能描述:TRANSISTOR,PNP,W/RES,40V,0.8A,SOT23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Power Dissipation Pd:250mW; DC Collector Current:-600mA; DC Current Gain hFE:320; Operating Temperature Min:-55C; No. of Pins:3 ;RoHS Compliant: Yes |
| PBRP123YT T/R | 功能描述:开关晶体管 - 偏压电阻器 BISS RET RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| PBRP123YT,215 | 功能描述:开关晶体管 - 偏压电阻器 BISS RET RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| PBRR | 制造商:SAIA - BURGESS ELECTRONICS INC. 功能描述:Non Catalogue / PBRR |
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