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参数资料
| 型号： | PBYR2080CTB |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Connector assemblies, Computer cables; |
| 中文描述： | 10 A, 80 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 46K |
| 代理商： | PBYR2080CTB |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR20100CT, PBYR20100CTB series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
0
10
PBYR10100
IF(AV) / A
PF / W
15
10
5
0
Vo = 0.550 V
Rs = 0.015 Ohms
0.1
D = 1.0
0.5
0.2
Tmb / C
150
15
130
140
120
5
T
I
D =
t
p
t
p
T
t
0
50
100
100
10
1
0.1
0.01
IR / mA
VR/ V
PBYR10100
75 C
100 C
125 C
150 C
Tj = 50 C
0
2
4
6
8
10
PBYR10100
IF(AV) / A
PF / W
Vo = 0.550 V
Rs = 0.015 Ohms
10
8
6
4
2
0
a = 1.57
1.9
2.2
2.8
4
Tmb / C
150
130
134
138
142
146
1
100
10000
1000
100
10
Cd/ pF
10
PBYR20100CT
0
1
2
PBYR10100
VF / V
IF / A
50
40
30
20
10
0
0.5
1.5
Tj = 25 C
Tj = 125 C
Typ
Max
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
PBYR20100CT
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
November 1998
3
Rev 1.300
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