参数资料
型号: PC28F128J3C-125
厂商: Intel Corp.
英文描述: Intel StrataFlash Memory (J3)
中文描述: 英特尔StrataFlash存储器(J3)
文件页数: 2/72页
文件大小: 905K
代理商: PC28F128J3C-125
2
Datasheet
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future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.
The 3 Volt Intel StrataFlash Memory may contain design defects or errors known as errata which may cause the product to deviate from published
specifications. Current characterized errata are available on request.
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相关代理商/技术参数
参数描述
PC28F128J3C-150 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
PC28F128J3D-75 制造商:NUMONYX 制造商全称:Numonyx B.V 功能描述:Numonyx? Embedded Flash Memory (J3 v. D)
PC28F128J3D75A 功能描述:IC FLASH 128MBIT 75NS 64EZBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:StrataFlash™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
PC28F128J3D75B 功能描述:IC FLASH 128MBIT 75NS 64EZBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:StrataFlash™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ
PC28F128J3D75D 功能描述:IC FLASH 128MBIT 75NS 64EZBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:StrataFlash™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步,DDR II 存储容量:18M(1M x 18) 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA(13x15) 包装:托盘 其它名称:71P71804S200BQ