- 您现在的位置：买卖IC网 > PDF目录369948 > PC28F256J3C-120 (Intel Corp.) Intel StrataFlash Memory (J3) PDF资料下载
参数资料
| 型号： | PC28F256J3C-120 |
| 厂商： | Intel Corp. |
| 英文描述： | Intel StrataFlash Memory (J3) |
| 中文描述： | 英特尔StrataFlash存储器（J3） |
| 文件页数： | 6/72页 |
| 文件大小： | 905K |
| 代理商： | PC28F256J3C-120 |
第1页第2页第3页第4页第5页当前第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页
Contents
6
Datasheet
07/27/01
-009
Added Figure 4,
3 Volt Intel StrataFlash
Memory VF BGA Package (32 Mbit)
Added Figure 5,
3 Volt Intel StrataFlash
Memory VF BGA Mechanical
Specifications
Updated Operating Temperature Range to Extended (Section 6.1 and Table 22)
Reduced t
EHQZ
to 35 ns. Reduced t
WHEH
to 0 ns
Added parameter values for –40 °C operation to Lock-Bit and Suspend Latency
Updated V
LKO
and V
PENLK
to 2.2 V
Removed Note #4, Section 6.4 and Section 6.6
Minor text edits
10/31/01
-010
Added notes under lead descriptions for VF BGA Package
Removed 3.0 V - 3.6 V Vcc, and Vccq columns under AC Characteristics
Removed byte mode read current row un DC characteristics
Added ordering information for VF BGA Package
Minor text edits
03/21/02
-011
Changed datasheet to reflect the best known methods
Updated max value for Clear Block Lock-Bits time
Minor text edits
12/12/02
-012
Added nomenclature for J3C (0.18 μm) devices.
01/24/03
-013
Added 115 ns access speed 64 Mb J3C device. Added 120 ns access speed 128
Mb J3C device. Added “TE” package designator for J3C TSOP package.
12/09/03
-014
Revised Asynchronous Page Read description. Revised Write-to-Buffer flow
chart. Updated timing waveforms. Added 256-Mbit J3C pinout.
1/3/04
-015
Added 256Mbit device timings, device ID, and CFI information. Also corrected
VLKO specification.
1/23/04
-016
Corrected memory block count from 257 to 255.
1/23/04
-016
Memory block count fix.
5/19/04
-018
Restructured the datasheet layout.
7/7/04
-019
Added lead-free part numbers and 8-word page information.
11/23/04
-020
Added Note to DC Voltage Characteristics table; “Speed Bin” to Read Operations
table; Corrected format for AC Waveform for Reset Operation figure; Corrected
“R” and “8W” headings in Enhanced Configuration Register table because they
were transposed; Added 802 and 803 to ordering information and corrected 56-
Lead TSOP combination number.
3/24/05
-021
Corrected ordering information.
Date of
Revision
Version
Description
相关PDF资料 |
PDF描述 |
|---|---|
| PC28F256J3C-125 | Intel StrataFlash Memory (J3) |
| PC28F256J3C-150 | Intel StrataFlash Memory (J3) |
| PC28F128J3A-110 | Intel StrataFlash Memory (J3) |
| PC28F128J3A-115 | Intel StrataFlash Memory (J3) |
| PC28F640J3C-125 | Intel StrataFlash Memory (J3) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PC28F256J3C125 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash?? Memory |
| PC28F256J3C-125 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| PC28F256J3C125 S B93 | 制造商:Intel 功能描述: |
| PC28F256J3C-150 | 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3) |
| PC28F256J3D95A | 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:StrataFlash™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
发布紧急采购，3分钟左右您将得到回复。