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参数资料
型号： PC28F256J3C-125
厂商： INTEL CORP
元件分类： PROM
英文描述： Intel StrataFlash Memory (J3)
中文描述： 16M X 16 FLASH 2.7V PROM, 125 ns, PBGA64
封装： LEAD FREE, BGA-64
文件页数： 55/72页
文件大小： 905K
代理商： PC28F256J3C-125
256-Mbit J3 (x8/x16)
Datasheet
55
A.5
System Interface Information
The following device information can optimize system interface software.
A.6
Device Geometry Definition
This field provides critical details of the flash device geometry.
0000h means no second vendor-specified algorithm exists
Secondary algorithm Extended Query Table address.
0000h means none exists
18:
19:
1A:
--00
--00
--00
19h
2
Table 27. CFI Identification (Sheet 2 of 2)
Offset
Length
Description
Add.
Hex
Code
Value
Table 28. System Interface Information
Offset
Length
Description
Add.
Hex
Code
Value
1Bh
1
V
logic supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
V
logic supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 BCD volts
V
PP
[programming] supply minimum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
V
[programming] supply maximum program/erase voltage
bits 0–3 BCD 100 mV
bits 4–7 HEX volts
“n” such that typical single word program time-out = 2
n
μs
“n” such that typical max. buffer write time-out = 2
n
μs
“n” such that typical block erase time-out = 2
n
ms
“n” such that typical full chip erase time-out = 2
n
ms
“n” such that maximum word program time-out = 2
n
times
typical
“n” such that maximum buffer write time-out = 2
n
times typical
“n” such that maximum block erase time-out = 2
n
times typical
“n” such that maximum chip erase time-out = 2
n
times typical
1B:
--27
2.7 V
1Ch
1
1C:
--36
3.6 V
1Dh
1
1D:
--00
0.0 V
1Eh
1
1E:
--00
0.0 V
1Fh
20h
21h
22h
1
1
1
1
1F:
20:
21:
22:
--08
--08
--0A
--00
256 μs
256 μs
1 s
NA
23h
1
23:
--04
2 ms
24h
25h
26h
1
1
1
24:
25:
26:
--04
--04
--00
2 ms
16 s
NA
Table 29. Device Geometry Definition (Sheet 1 of 2)
Offset
Length
Description
Code See Table
Below
27:
27h
1
“n” such that device size = 2
n
in number of bytes
28h
2
Flash device interface: x8 async x16 async x8/x16 async
28:
--02
x8/
x16
28:00,29:00 28:01,29:00 28:02,29:00
“n” such that maximum number of bytes in write buffer = 2
n
29:
2A:
2B:
--00
--05
--00
2Ah
2
32
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相关代理商/技术参数
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PC28F256J3C125 S B93 制造商:Intel 功能描述:
PC28F256J3C-150 制造商:INTEL 制造商全称:Intel Corporation 功能描述:Intel StrataFlash Memory (J3)
PC28F256J3D95A 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:StrataFlash™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ
PC28F256J3D95B 功能描述:IC FLASH 256MBIT 95NS 64EZBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:StrataFlash™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ
PC28F256J3F950 制造商:Micron Technology Inc 功能描述:256MB, TURLOCK EBGA 3.0 LF - Trays
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