
33394
11
MOTOROLA ANALOG INTEGRATED CIRCUIT DEVICE DATA
3. ELECTRICAL CHARACTERISTICS (–40
°C ≤ TA ≤ +125°C; +4.0 V ≤ VBAT ≤ +26.5 V using the 33394 typical application
circuit – see Figure 1, unless otherwise noted.)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
DC CHARACTERISTICS:
VREF1, 2, 3
VREF Output Voltage, IVREF = –100 mA
VREF
4.86
5.0
5.12
V
VREF Load Regulation, VBAT = 13.3 V; IVREF = 0 to –100 mA
LoadRgVREF
–40
40
mV
VREF Line Regulation, VBAT = 4.0 V to 26.5 V; IVREF = –100 mA
LineRgVREF
–20
20
mV
VREF Tracking to VDDH Voltage, VDDH – VREF,
VBAT = 4.0 V to 26.5 V, IVREF = 0 to –100 mA;
IVDDH = 0 to –400 mA
VTVREF
–40
20
mV
VREF Drop Out Voltage, VPRE–VREF
IVREF = –100 mA; Decrease VBAT until VREF is out of specification
(less than 4.86 V)
VDOV
0.4
V
VREF Output Current, VBAT = 4.0 V to 26.5 V
IVREF
–100
mA
VREF Short Circuit Current, VREF = –2.0 V
ISC
–260
–110
mA
VREF Short to Battery Load Current, VBAT = 18 V, VREF = 18 V
IstbVREF
40
mA
VREF Leakage Current, VREF disabled, VREF = –2.0 V
ILKVREF
–2.0
mA
Thermal Shutdown Junction Temperature
(Note 1)
TSDIS
150
190
°C
Thermal Shutdown Hysteresis
(Note 1)
TSHYS
5.0
20
°C
VSEN
VSEN Saturation Voltage, IVSEN = 0 to –125 mA, VBAT= 8 to 16 V
VSENsat
0.2
V
VSEN Output Voltage Limit, IVSEN = 0 to –125mA, VBAT= 16 to 26.5V
VSENlimit
16
17
21
V
VSEN Short Circuit Current, VSEN = –2.0 V
IscVSEN
–290
–140
mA
VSEN Short to Battery Load Current, VBAT = 18 V, VSEN = 18 V
IstbVSEN
40
mA
VSEN Leakage Current, VSEN disabled, VSEN = –2.0 V
ILKVSEN
200
A
Thermal Shutdown Junction Temperature
(Note 1)
TSDIS
150
190
°C
Thermal Shutdown Hysteresis
(Note 1)
TSHYS
5.0
20
°C
NOTE:
1. Guaranteed by design but not production tested.
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Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
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