参数资料
型号: PC3Q71xNIP
厂商: Sharp Corporation
英文描述: FIBRE PL ECO 1MM DR
中文描述: 低输入电流型光电耦合器
文件页数: 2/5页
文件大小: 75K
代理商: PC3Q71XNIP
PC3H71
X
NIP Series/PC3Q71
X
NIP Series
I
Electro-optical Characteristics
Parameter
Forward voltage
Reverse current
Terminal capacitance
Collector dark current
Collector-emitter breakdown voltage
Fig.1 Test Circuit for Common Mode Rejection Voltage
Fig.2 Forward Current vs. Ambient
Temperature
Symbol
V
F
I
R
C
t
I
CEO
BV
CEO
BV
ECO
MIN.
70
6
TYP.
1.2
MAX.
1.4
10
Unit
V
μ
A
pF
nA
Collector
current
Collector-emitter saturation voltage
Isolation resistance
Floating capacitance
Response time
Common mode rejection voltage
Emitter-collector breakdown voltage
PC3H71
X
NIP Series
PC3Q71
X
NIP Series
Rise time
Fall time
R
ISO
C
f
tr
tf
I
C
V
CE (sat)
CMR
Conditions
I
F
=
10mA
V
R
=
4V
I
F
=
0.5mA, V
CE
=
5V
I
F
=
10mA, I
C
=
1mA
DC500V 40 to 60%RH
V
=
0, f
=
1MHz
V
=
0, f
=
1kHz
V
CE
=
50V, I
F
=
0
I
C
=0.1mA, I
F
=0
I
E
=10
μ
A, I
F
=0
V
CE
=
2V, I
C
=
2mA, R
L
=
100
Ta
=
25
°
C, R
L
=
470
,
V
CM
=
1.5kV (peak),
I
F
=
0mA, V
CC
=
9V, Vnp
=
100mV
30
0.5
5
×
10
10
1
×
10
11
0.6
4
3
3.0
0.2
3.5
250
100
1.0
18
18
10
V
V
V
μ
s
μ
s
kV/
μ
s
mA
pF
(Ta
=
25
°
C)
I
O
T
*1 Refer to Fig.1.
*1
V
CM
V
cp
V
np
V
O
(dV/d
t
)
1)
R
L
V
np
V
CC
V
CM
V
High wave
pulse
R
L
=
470
V
CC
=
9V
1) V
: Voltage which is generated by displacement current in floating
capacitance between primary and secondary side.
(V
cp
Nearly
=
dV/d
t
×
C
f
×
R
L
)
F
F
Ambient temperature T
a
(
°
C)
0
30
10
5
0
25
50
75
100
125
Fig.3
Diode Power Dissipation vs. Ambient
Temperature
D
Ambient temperature T
a
(
°
C)
0
30
15
10
5
0
25
50
75
100
125
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