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参数资料
| 型号： | PC456L0NIP0F |
| 厂商： | Sharp Microelectronics |
| 文件页数： | 4/13页 |
| 文件大小： | 0K |
| 描述： | PHOTOCOUPLER OPIC HI CMR 5-SMD |
| 产品目录绘图： | PC410L Circuit |
| 标准包装： | 1 |
| 系列： | OPIC™ |
| 电压 - 隔离： | 3750Vrms |
| 通道数： | 1，单向 |
| 电流 - 输出 / 通道： | 15mA |
| 数据速率： | 2Mbps |
| 传输延迟高 - 低 @ 如果： | 210ns @ 10mA |
| 电流 - DC 正向(If)： | 25mA |
| 输入类型： | DC |
| 输出类型： | 开路集电极 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-SOIC（0.173"，4.40mm 宽，5 引线） |
| 供应商设备封装： | 5-MFP |
| 包装： | 标准包装 |
| 其它名称： | 425-2592-6 |
PC456L0NIP0F Series
■ Absolute Maximum Ratings
(T a = 25?C)
Parameter
Symbol Rating
Unit
Input
Output
*1
*2
*3
Forward current
Reverse voltage
Power dissipation
Supply voltage
Output voltage
Output current
Power dissipation
I F
V R
P
V CC
V O
I O
P O
25
5
45
? 0.5 to + 35
? 0.5 to + 35
15
100
mA
V
mW
V
V
mA
mW
Operating temperature
Storage temperature
T opr
T stg
? 40 to + 85
? 55 to + 125
?C
?C
*4
*5
Isolation voltage
Soldering temperature
V iso (rms)
T sol
3.75
260
kV
?C
*1 When ambient temperature goes above 70?C, the power dissipation goes down at
0.8mA/?C. (Fig.3)
*2 When ambient temperature goes above 70?C, the power dissipation goes down at
1.5mW/?C. (Fig.4)
*3 When ambient temperature goes above 70?C, the power dissipation goes down at
1.8mW/?C. (Fig.4)
*4 40 to 60%RH, AC for 1minute, f = 60Hz
*5 For 10s
■ Electro-optical Characteristics * 6
(unless otherwise specified T a = ? 40 to 85?C, V CC =4.5 to 35V)
Parameter
Forward voltage
Reverse current
Terminal capacitance
Operating supply voltage
Low level output voltage
Low level output current
High level output current
High level supply current
Low level supply current
"High → Low" input threshold current
Isolation resistance
Floating capacitance
"High → Low" propagation delay time
"Low → High" propagation delay time
*7 Distortion of pulse width
Propagation delay skew
Instantaneous common mode rejection
voltage
(High level output)
Instantaneous common mode rejection
voltage
(Low level output)
Symbol
V F
I R
C t
V CC
V OL
I OL
I OH
I CCH
I CCL
I FHL
R ISO
C f
t PHL
t PLH
? tw
T PSK
CM H
CM L
Conditions
T a = 25?C, I F = 10mA
T a = 25?C, V R = 5V
T a = 25?C, V = 0, f = 1MHz
?
I F = 10mA, I O = 2.4mA
I F = 10mA, V O = 0.6V
I F = 0, V CC = V O
I F = 0, V O = OPEN
I F = 10mA, V O = OPEN
V O = 0.8V, R L = 20k ? , V CC = 15V
T a = 25?C, DC500V, 40 to 60%RH
T a = 25?C, V = 0, f = 1MHz
I F = 10mA (t PHL ), I F = 0 (t PLH ),
V CC = 15V, R L = 20k ? , C L = 100pF
V THLH = 2.0V, V THHL = 1.5V
T a = 25?C, I F = 0, V CC = 15V, C L = 100pF,
V CM = 1.5kV (P-P) , R L = 20k ? , V O > 3.0V
T a = 25?C, I F = 10mA, V CC = 15V, C L = 100pF,
V CM = 1.5kV (P-P) , R L = 20k ? , V O < 1.0V
MIN.
?
?
?
4.5
?
4.4
?
?
?
?
5 × 10 10
?
30
270
?
?
15
? 15
TYP.
1.6
?
60
?
0.3
9
5
0.6
0.8
1.5
10 11
0.6
210
400
190
200
30
? 30
MAX.
1.95
10
150
35
0.6
?
50
1.3
1.3
5
?
1
400
550
450
450
?
?
Unit
V
μ A
pF
V
V
mA
μ A
mA
mA
mA
?
pF
ns
kV/ μ s
*6 It shall connect a by-pass capacitor of 0.01 μ F or more between V CC (pin 6 ) and GND (pin 4 ) near the device, when it measures the transfer characteristics and the output side
characteristics
*7 Distortion of pulse width ? tw = | t PHL ? t PLH |
Sheet No.: D2-A04702EN
4
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