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| 型号： | PC9RS08LE4CWL |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 26/28页 |
| 文件大小： | 0K |
| 描述： | MCU 8BIT 4K FLASH W/ LCD 28-SOIC |
| 标准包装： | 26 |
| 系列： | RS08 |
| 核心处理器： | RS08 |
| 芯体尺寸： | 8-位 |
| 速度： | 20MHz |
| 连通性： | SCI |
| 外围设备： | LCD，LVD，POR，PWM，WDT |
| 输入/输出数： | 26 |
| 程序存储器容量： | 4KB（4K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 256 x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 数据转换器： | A/D 8x10b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-SOIC（0.295"，7.50mm 宽） |
| 包装： | 托盘 |
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ESD Protection and Latch-Up Immunity
MC9RS08LE4 MCU Data Sheet, Rev. 3
Freescale Semiconductor
7
The average chip-junction temperature (TJ) in
°C can be obtained from:
TJ = TA + (PD × θJA)
Eqn. 1
where:
TA = Ambient temperature, °C
θJA = Package thermal resistance, junction-to-ambient, °C /W
PD = Pint + PI/O
Pint = IDD × VDD, Watts chip internal power
PI/O = Power dissipation on input and output pins user determined
For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ
(if PI/O is neglected) is:
PD = K ÷ (TJ + 273°C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA× (PD)2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving equations 1 and 2 iteratively for any value of TA.
3.5
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
Table 4. Thermal Characteristics
Rating
Symbol
Value
Unit
Operating temperature range (packaged)
TA
TL to TH
–40 to 85
°C
Maximum junction temperature
TJMAX
105
°C
Thermal resistance
Single layer board 28-pin SOIC
θJA
70
°C/W
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相关代理商/技术参数 |
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| PC9S08AC128CFGE | 功能描述:8位微控制器 -MCU 8-Bit MCU 128K FLASH 8K RAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| PC9S08AC128CFUE | 功能描述:8位微控制器 -MCU 8-Bit MCU 128K FLASH 8K RAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| PC9S08AC128CLKE | 功能描述:8位微控制器 -MCU 8-Bit MCU 128K FLASH 8K RAM RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT |
| PC9S08AC16MFDE | 制造商:Freescale Semiconductor 功能描述:MCU - Trays |
| PC9S08AC16MFGE | 制造商:Freescale Semiconductor 功能描述: |
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