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| 型号： | PC9S08QE64CLH |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/50页 |
| 文件大小： | 0K |
| 描述： | MCU 8BIT 64K FLASH 64-LQFP |
| 标准包装： | 160 |
| 系列： | S08 |
| 核心处理器： | S08 |
| 芯体尺寸： | 8-位 |
| 速度： | 50MHz |
| 连通性： | I²C，LIN，SCI，SPI |
| 外围设备： | LVD，PWM，WDT |
| 输入/输出数： | 54 |
| 程序存储器容量： | 64KB（64K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 4K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.8 V ~ 3.6 V |
| 数据转换器： | A/D 22x12b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 64-LQFP |
| 包装： | 托盘 |
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MC9S08QE128 Series Data Sheet, Rev. 7
Electrical Characteristics
Freescale Semiconductor
12
3
Electrical Characteristics
3.1
Introduction
This section contains electrical and timing specifications for the MC9S08QE128 series of microcontrollers available at the time
of publication.
3.2
Parameter Classification
The electrical parameters shown in this supplement are guaranteed by various methods. To give the customer a better
understanding the following classification is used and the parameters are tagged accordingly in the tables where appropriate:
NOTE
The classification is shown in the column labeled “C” in the parameter tables where
appropriate.
3.3
Absolute Maximum Ratings
Absolute maximum ratings are stress ratings only, and functional operation at the maxima is not guaranteed. Stress beyond the
limits specified in Table 4 may affect device reliability or cause permanent damage to the device. For functional operating
conditions, refer to the remaining tables in this section.
This device contains circuitry protecting against damage due to high static voltage or electrical fields; however, it is advised
that normal precautions be taken to avoid application of any voltages higher than maximum-rated voltages to this
high-impedance circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate logic voltage level (for
instance, either VSS or VDD) or the programmable pull-up resistor associated with the pin is enabled.
Table 3. Parameter Classifications
P
Those parameters are guaranteed during production testing on each individual device.
C
Those parameters are achieved by the design characterization by measuring a statistically relevant sample
size across process variations.
T
Those parameters are achieved by design characterization on a small sample size from typical devices
under typical conditions unless otherwise noted. All values shown in the typical column are within this
category.
D
Those parameters are derived mainly from simulations.
Table 4. Absolute Maximum Ratings
Rating
Symbol
Value
Unit
Supply voltage
VDD
–0.3 to +3.8
V
Maximum current into VDD
IDD
120
mA
Digital input voltage
VIn
–0.3 to VDD +0.3
V
Instantaneous maximum current
Single pin limit (applies to all port pins)1, 2, 3
1
Input must be current limited to the value specified. To determine the value of the required
current-limiting resistor, calculate resistance values for positive (VDD) and negative (VSS) clamp
voltages, then use the larger of the two resistance values.
2 All functional non-supply pins are internally clamped to VSS and VDD.
ID
± 25
mA
Storage temperature range
Tstg
–55 to 150
°C
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