参数资料
型号: PCF1252-9
厂商: NXP Semiconductors N.V.
英文描述: CAPACITOR, CERAMIC, CHIP
中文描述: 阈值检测器和复位发生器
文件页数: 11/16页
文件大小: 107K
代理商: PCF1252-9
1998 Apr 16
4
Philips Semiconductors
Product specication
Threshold detector and reset generator
PCF1252-X family
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal handling precautions appropriate to handling MOS devices (see
“Handling MOS Devices”).
CHARACTERISTICS
VDD = 2.4 to 6.0 V; VSS =0V; Tamb = 40 to +85 °C; (see Fig.3); unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDD
supply voltage
0.5
+7.0
V
VI
input voltage
0.5
VDD + 0.5
V
II
DC clamp-diode current
all pins: VI < 0.5 V
or VI >VDD + 0.5 V
20
mA
IO
output current
20
mA
Ptot
total power dissipation
150
mW
Tstg
storage temperature
65
+100
°C
Tamb
operating ambient temperature
40
+85
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDD
supply voltage
2.4
6.0
V
VTRIP
Voltage trip-point:
Tamb =25 °C; note 1
PCF1252-0
4.70
4.75
4.80
V
PCF1252-1
4.50
4.55
4.60
V
PCF1252-2
4.20
4.25
4.30
V
PCF1252-3
4.00
4.05
4.10
V
PCF1252-4
3.70
3.75
3.80
V
PCF1252-5
3.50
3.55
3.60
V
PCF1252-6
3.20
3.25
3.30
V
PCF1252-7
3.00
3.05
3.10
V
PCF1252-8
2.70
2.75
2.80
V
PCF1252-9
2.50
2.55
2.60
V
IDD
supply current
Tamb =25 °C;
VDD =VTRIP + 0.5 V;
COMIN = VDD;
see Figs. 4 and 5
10
15
A
V
TRIP
voltage trip-point temperature
coefcient
note 2
±100 × 106 ±400 × 106 mV/K
Vhys
voltage trip-point hysteresis
15
30
50
mV
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