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| 型号： | PCF51JM128EVLK |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 9/49页 |
| 文件大小： | 0K |
| 描述： | MCU 32BIT 128K FLASH 80-LQFP |
| 标准包装： | 90 |
| 系列： | MCF51JM |
| 核心处理器： | Coldfire V1 |
| 芯体尺寸： | 32-位 |
| 速度： | 50MHz |
| 连通性： | CAN，I²C，SCI，SPI，USB OTG |
| 外围设备： | LVD，PWM，WDT |
| 输入/输出数： | 66 |
| 程序存储器容量： | 128KB（128K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 16K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 数据转换器： | A/D 12x12b |
| 振荡器型： | 外部 |
| 工作温度： | -40°C ~ 105°C |
| 封装/外壳： | 80-LQFP |
| 包装： | 托盘 |
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Preliminary Electrical Characteristics
MCF51JM128 ColdFire Microcontroller, Rev. 4
Freescale Semiconductor
17
The average chip-junction temperature (TJ) in C can be obtained from:
TJ = TA + (PD JA)
Eqn. 1
where:
TA = Ambient temperature, CJA = Package thermal resistance, junction-to-ambient, C/WPD = Pint PI/OPint =
IDD VDD, Watts — chip internal powerPI/O = Power dissipation on input and output pins — user determined
For most applications, PI/O Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected)
is:
PD = K (TJ + 273C)
Eqn. 2
Solving equations 1 and 2 for K gives:
K = PD (TA + 273C) + JA (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations 1 and 2 iteratively for any
value of TA.
2.4
Electrostatic Discharge (ESD) Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling
precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices
can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade Integrated Circuits.
(http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device specification
requirements. Complete DC parametric and functional testing is performed per the applicable device specification at room
temperature followed by hot temperature, unless specified otherwise in the device specification.
3 1s - Single Layer Board, one signal layer
4 2s2p - Four Layer Board, 2 signal and 2 power layers
Table 8. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human Body
Series Resistance
R1
1500
Storage Capacitance
C
100
pF
Number of Pulse per pin
–
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PCF51JM128VLD | 制造商:Freescale Semiconductor 功能描述:44L 128K FLASH 16K RAM - Trays |
| PCF51JM128VLH | 功能描述:32位微控制器 - MCU 64L 128K FLASH 16K RAM RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT |
| PCF51JM128VQH | 功能描述:32位微控制器 - MCU 64Q 128K FLASH 16K RAM RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT |
| PCF51JM64EVLK | 功能描述:32位微控制器 - MCU RS80CAU 64KFLASH 8K RAM RoHS:否 制造商:Texas Instruments 核心:C28x 处理器系列:TMS320F28x 数据总线宽度:32 bit 最大时钟频率:90 MHz 程序存储器大小:64 KB 数据 RAM 大小:26 KB 片上 ADC:Yes 工作电源电压:2.97 V to 3.63 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:LQFP-80 安装风格:SMD/SMT |
| PCF51JM64VLD | 制造商:Freescale Semiconductor 功能描述:44L 64K FLASH 8K RAM - Trays |
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