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参数资料
| 型号： | PCF85102C-2T/03,11 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 1/20页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 2KBIT 100KHZ 8SOIC |
| 标准包装： | 2,500 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 100kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 2.5 V ~ 6.0 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 带卷 (TR) |
| 其它名称： | 935262037118 PCF85102C2D-T PCF85102C2D-T-ND |
PCF85102C-2
256 × 8-bit CMOS EEPROM with I 2 C-bus interface
Rev. 04 — 22 October 2004
Product data
1. Description
The PCF85102C-2 is a ?oating gate Electrically Erasable Programmable Read Only
Memory (EEPROM) with 2 kbits (256 × 8-bit) non-volatile storage. By using an
internal redundant storage code, it is fault tolerant to single bit errors. This feature
dramatically increases the reliability compared to conventional EEPROMs. Power
consumption is low due to the full CMOS technology used. The programming voltage
is generated on-chip, using a voltage multiplier.
Data bytes are received and transmitted via the serial I 2 C-bus. Up to eight
PCF85102C-2 devices may be connected to the I 2 C-bus. Chip select is accomplished
by three address inputs (A0, A1 and A2).
2. Features
s Low power CMOS:
x 2.0 mA maximum operating current
x maximum standby current 10 μ A (at 6.0 V), typical 4 μ A
s Non-volatile storage of 2 kbits organized as 256 × 8-bit
s Single supply with full operation down to 2.5 V
s On-chip voltage multiplier
s Serial input/output I 2 C-bus
s Write operations:
x byte write mode
x 8-byte page write mode (minimizes total write time per byte)
s Read operations:
x sequential read
x random read
s Internal timer for writing (no external components)
s Internal power-on reset
s 0 kHz to 100 kHz clock frequency
s High reliability by using a redundant storage code
s Endurance: 1,000,000 Erase/Write (E/W) cycles at T amb = 22 ° C
s 10 years non-volatile data retention time
s Pin and address compatible to: PCF8570, PCF8571, PCF8572, PCA8581,
PCF8582
s Pin compatible (with a different address) to PCF85103
s ESD protection exceeds 2000 V HBM per JESD22-A114, 150 V MM per
JESD22-A115, and 1000 V CDM per JESD22-C101
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PCF85103C | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Smart, simple solutions for the 12 most common design concerns |
| PCF85103C-2 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:256 x 8-bit CMOS EEPROM with I2C-bus interface |
| PCF85103C-2_04 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:256 x 8-bit CMOS EEPROM with I2C-bus interface |
| PCF85103C2D | 功能描述:电可擦除可编程只读存储器 256X8-BIT CMOS 电可擦除可编程只读存储器/I2C BUS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| PCF85103C2N | 功能描述:电可擦除可编程只读存储器 256X8-BIT CMOS 电可擦除可编程只读存储器/I2C BUS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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