参数资料
型号: PCF8598C-2T/02,112
厂商: NXP Semiconductors
文件页数: 1/21页
文件大小: 0K
描述: IC EEPROM 8KBIT 100KHZ 8SOIC
产品培训模块: I²C Bus Fundamentals
特色产品: NXP - I2C Interface
标准包装: 64
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 8K (1K x 8)
速度: 100kHz
接口: I²C,2 线串口
电源电压: 2.5 V ~ 6.0 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.295",7.50mm 宽)
供应商设备封装: 8-SO
包装: 管件
产品目录页面: 827 (CN2011-ZH PDF)
其它名称: 568-3640-5
935182390112
PCF8598C2D
PCF8598C-2
1024 × 8-bit CMOS EEPROM with I 2 C-bus interface
Rev. 06 — 22 October 2004
Product data
1. Description
The PCF8598C-2 is a ?oating gate Electrically Erasable Programmable Read Only
Memory (EEPROM) with 8 kbits (1024 × 8-bit) non-volatile storage. By using an
internal redundant storage code, it is fault tolerant to single bit errors. This feature
dramatically increases the reliability compared to conventional EEPROMs. Power
consumption is low due to the full CMOS technology used. The programming voltage
is generated on-chip, using a voltage multiplier.
Data bytes are received and transmitted via the serial I 2 C-bus. Up to two
PCF8598C-2 devices may be connected to the I 2 C-bus. Chip select is accomplished
by one address input (A2).
Timing of the E/W cycle is carried out internally, thus no external components are
required. Programming Time Control (PTC), Pin 7, must be connected to either V DD
or left open-circuit. There is an option of using an external clock for timing the length
of an E/W cycle.
2. Features
s Low power CMOS:
x 2.0 mA maximum operating current
x maximum standby current 10 μ A (at 6.0 V), typical 4 μ A
s Non-volatile storage of 8 kbits organized as 1024 × 8-bit
s Single supply with full operation down to 2.5 V
s On-chip voltage multiplier
s Serial input/output I 2 C-bus
s Write operations:
x byte write mode
x 8-byte page write mode (minimizes total write time per byte)
s Read operations:
x sequential read
x random read
s Internal timer for writing (no external components)
s Internal power-on reset
s 0 kHz to 100 kHz clock frequency
s High reliability by using a redundant storage code
s Endurance: 1,000,000 Erase/Write (E/W) cycles at T amb = 22 ° C
s 10 years non-volatile data retention time
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