参数资料
型号: PD100MF0MP
厂商: Sharp Microelectronics
文件页数: 4/10页
文件大小: 0K
描述: PHOTODIODE IR 850NM SIDE LOOK
标准包装: 1
波长: 850nm
光谱范围: 680nm ~ 1100nm
响应时间: 10ns
电压 - (Vr)(最大): 20V
电流 - 暗(标准): 10nA
视角: 40°
工作温度: -30°C ~ 85°C
封装/外壳: 侧视图
其它名称: 425-1028-1
PD100MF0MPx
Fig. 3 Radiation Diagram (TYP.)
Ta = 25°C
-20°
-10°
+10°
+20°
100
-30°
8 0
+30°
-40°
-50°
60
40
+40°
+50°
-60°
-70°
- 8 0° -90°
+90°
20
+60°
+70°
+ 8 0°
-90°
Anode Cathode
0
+90°
Ang u lar Displacement θ
■ Design Considerations
Design Guidelines
1. This product is not designed to be electromagnetic- and ionized-particle-radiation resistant.
■ Manufacturing Guidelines
Soldering Instructions
1. Sharp recommends soldering no more than once when using solder reflow methods.
2. When using solder reflow methods, follow the reflow soldering temperature profile shown in Fig. 4. Sharp rec-
ommends checking the process to make sure these parameters are not exceeded; exceeding these parameters
can cause substrate bending or other mechanical stresses leading to debonding of the internal gold wires, or
other similar failure modes.
3. If using an infrared lamp to preheat the parts, such heat sources may cause localized high temperatures in the
part's resin. Be sure to keep the temperature profile within the guidelines shown in Fig. 4.
4. If hand soldering, use temperatures ≤ 260° for ≤ 3 seconds. Do not dip-solder or V PS-solder this part.
5. Do not subject the package to excessive mechanical force during soldering as it may cause deformation or
defects in plated connections. Internal connections may be severed due to mechanical force placed on the pack-
age due to the PCB flexing during the soldering process.
Sheet No.: D1-A00301EN
4
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