参数资料
型号: PD7XX26
厂商: Mitsubishi Electric Corporation
英文描述: InGaAs PIN PHOTO DIODES
中文描述: 铟镓砷PIN光电二极管
文件页数: 1/2页
文件大小: 32K
代理商: PD7XX26
MITSUBISHI PHOTO DIODES
PD7XX26 SERIES
InGaAs PIN PHOTO DIODES
PD793D26
DESCRIPTION
Feature
PD793D26 Series are InGaAs pin photodiodes
which has a sensitive area of
f
20
m
m.
PD7XX26 is suitable for receving the light having
a wavelength band of 1000 to 1600nm.
This photodiode features high-speed response and
a high quantum efficiency, and is suitable for the
light receiving elements for optical fiber
communication systems.
APPLICATION
Receiver for optical communication system
ABSOLUTE MAXIMUM RATINGS
Symbol
Vr
Reverse voltage
Ir
Reverse current
If
Forward curent
Tc
Case temperature
Tstg
Storage temperature
ELECTRICAL / OPTICAL CHARACTERISTICS
(Tc=25 C)
Parameter
Conditions
-
-
-
-
-
Ratings
20
500
2
-40 ~ +85
-40 ~ +100
Unit
V
m
A
mA
C
C
Limits
Typ.
0.16
0.5
0.85
10
Symbol
Parameter
Test conditions
Min.
-
-
0.75
8
Max.
0.30
2.0
-
-
Unit
Ct
Id
R
fc
Capacitance
Dark current
Responsivity
Cut-off frequency
Vr=5V, f=1MHz
Vr=5V
pF
nA
A/W
GHz
Vr=5V,
l
=1300nm
Vr=5V,
l
=1300nm, RL=50
W
, -3dB
f
20
m
m active diameter
1000~1600nm wavelength band
Small dark current
High speed response
High quantum efficiency
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