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参数资料
| 型号： | PE4263 |
| 厂商： | PEREGRINE SEMICONDUCTOR CORP |
| 元件分类： | 开关 |
| 英文描述： | SP6T UltraCMOS⑩ 2.6 V Switch 100 - 3000 MHz |
| 中文描述： | 100 MHz - 3000 MHz RF/MICROWAVE SGL POLE SIX THROW SWITCH, 1 dB INSERTION LOSS |
| 封装： | DIE-20 |
| 文件页数： | 1/2页 |
| 文件大小： | 131K |
| 代理商： | PE4263 |
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Document No. 70-0175-04
│ www.psemi.com
2005-2008 Peregrine Semiconductor Corp. All rights reserved.
NDA required for full version: contact sales@psemi.com
RX1
RX2
RX3
RX4
TX1
TX2
CMOS
Control/Driver
and ESD
V1
V2
V3
The PE4263 SP6T RF UltraCMOS Switch
addresses the specific design needs of the Quad-
Band GSM Handset Antenna Switch Module Market.
On-chip CMOS decode logic facilitates three-pin low
voltage CMOS control. High ESD tolerance of 1500
V at all ports, no blocking capacitor requirements
and on-chip SAW filter over-voltage protection
devices make this the ultimate in integration and
ruggedness.
The PE4263 RF Switch is manufactured on
Peregrine’s UltraCMOS process, a patented
variation of silicon-on-insulator (SOI) technology on
a sapphire substrate, offering the performance of
GaAs with the economy and integration of
conventional CMOS.
Product Brief
SP6T UltraCMOS 2.6 V Switch
100 – 3000 MHz
Product Description
Figure 1. Functional Diagram
Figure 3. Die Top View
PE4263 DIE
Features
ANT
TX
GN
GND
RX1
GND
RX2
GND
RX
GND
RX4
GN
VDD
VGN
V V1 GN
GN
Three pin CMOS logic control with
integral decoder/driver
Low TX insertion loss: 0.55 dB at 900
MHz, 0.65 dB at 1900 MHz
TX – RX Isolation of 48 dB at 900 MHz,
40 dB at 1900 MHz
Low harmonics: 2f
o = -85 dBc and
3fo = -72 dBc at 850/900 MHz
1500 V HBM ESD tolerance all ports
41 dBm P1dB
No blocking capacitors required
TX1
PE4263
Die
AN
T
TX2
RX1
RX2
V
DD
V3
V2
V1
GND
RX3
GND
RX4
GND
1
2
3
4
5
6
7
89
10 11
12
13
14
15
16
17
18
19
20
Figure 2. Pin Configuration (Top View)
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