参数资料
型号: PE42650AMLI-Z
厂商: Peregrine Semiconductor
文件页数: 9/11页
文件大小: 0K
描述: IC RF SWITCH SP3T 50 OHM 32-QFN
标准包装: 1
系列: UltraCMOS™, HaRP™
RF 型: 通用
频率: 30MHz ~ 1GHz
特点: SP3T
封装/外壳: 32-VFQFN 裸露焊盘
供应商设备封装: 32-QFN(5x5)
包装: 标准包装
其它名称: 1046-1050-6
PE42650A
Product Specification
Thermal Data
Though the insertion loss for this part is very low,
when handling high power RF signals, the part can
get quite hot.
Figure 24. Power Dissipation
3.0
1:1 VSWR (50 OhmLoad)
Figure 24 shows the estimated power dissipation for
a given incident RF power level. Multiple curves are
presented to show the effect of poor VSWR
conditions. VSWR conditions that present short
circuit loads to the part can cause significantly more
power dissipation than with proper matching.
Figure 25 shows the estimated maximum junction
temperature of the part for similar conditions.
Note that both of these charts assume that the case
2.5
2.0
1.5
1.0
0.5
2:1 VSWR (25 OhmLoad)
8:1 VSWR (6.25 OhmLoad)
20:1 VSWR (2.5 OhmLoad)
INF:1 VSWR (0 OhmLoad)
Reliabil ity Limit
(GND slug) temperature is held at 85C. Special
consideration needs to be made in the design of the
0.0
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
PCB to properly dissipate the heat away from the
part and maintain the 85C maximum case
temperature. It is recommended to use best design
practices for high power QFN packages: multi-layer
PCBs with thermal vias in a thermal pad soldered to
the slug of the package. Special care also needs to
be made to alleviate solder voiding under the part.
RF Power (dBm)
Figure 25. Maximum Junction Temperature
145
140
135
1:1 VSWR (50 OhmLoad)
Table 6. Theta JC
Parameter
Theta JC (+85°C)
Min
Typ
15
Max
Units
C/W
130
125
120
115
2:1 VSWR (25 OhmLoad)
8:1 VSWR (6.25 OhmLoad)
20:1 VSWR (2.5 OhmLoad)
INF:1 VSWR (0 OhmLoad)
Reliabil ity Limit
110
105
100
95
90
85
30
31
32
33
34
35
36
37
38
39
40
41
42 43
44
45
46
RF Power (dBm)
Document No. 70-0267-02 │ www.psemi.com
?2008-2009 Peregrine Semiconductor Corp. All rights reserved.
Page 9 of 11
Peregrine products are protected under one or more of the following U.S. Patents: http://patents.psemi.com
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