参数资料
型号: PE84244-01
厂商: PEREGRINE SEMICONDUCTOR CORP
元件分类: 开关
英文描述: SPDT MOSFET RF SWITCH
中文描述: 0 MHz - 3000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 0.95 dB INSERTION LOSS
封装: ULTRA THIN, MSOP-8
文件页数: 1/7页
文件大小: 218K
代理商: PE84244-01
PEREGRINE SEMICONDUCTOR CORP. | http://www.peregrine-semi.com
Copyright
Peregrine Semiconductor Corp. 2003
Page 1 of 7
Product Description
Figure 1. Functional Schematic Diagram
RFCommon
RF1
RF2
CTRL
Figure 2. Package Type
8-lead
MSOP
Table 1. Electrical Specifications -55 °C to +125 °C, VDD = 3 V (ZS = ZL = 50 )
Parameter
Conditions
Minimum
Typical
Maximum
Units
Operation Frequency
1
DC
3000
MHz
Insertion Loss
2000 MHz
0.7
0.95
dB
Isolation – RFCommon to
RF1/RF2
2000 MHz
25
28
dB
Isolation – RF1 to RF2
2000 MHz
24
27
dB
Return Loss
2000 MHz
18
25
dB
‘ON’ Switching Time
CTRL to 0.1 dB final value, 2 GHz
200
ns
‘OFF’ Switching Time
CTRL to 25 dB isolation, 2 GHz
90
ns
Video Feedthrough
2
15
mVpp
Input 1 dB Compression
2000 MHz
25
27
dBm
Input IP3
2000 MHz, 14dBm
40
42
dBm
Notes: 1. Device linearity will begin to degrade below 10 MHz.
2. The DC transient at the output of any port of the switch when the control voltage is switched from Low to High or High to Low in a
50 test set-up, measured with 1ns risetime pulses and 500 MHz bandwidth.
SPDT MOSFET RF Switch
Features
Single +3.0-volt Power Supply
Low Insertion loss: 0.70 dB up
to 2.0 GHz
High isolation of 39 dB at 1.0
GHz, 28 dB at 2.0 GHz, typical
Typical 1 dB compression of
+27 dBm
Single-pin CMOS logic control
Packaged in 8-lead MSOP
The PE84244 MOSFET RF Switch is designed to cover a
broad range of applications from DC to 3.0 GHz. This switch
integrates on-board CMOS control logic with a low voltage
CMOS compatible control input. Using a +3-volt nominal
power supply voltage, a 1 dB compression point of +27 dBm
can be achieved. The PE84244 also exhibits excellent
isolation of 28 dB at 2.0 GHz and is offered in a small 8-lead
MSOP package.
The PE4244 MOSFET RF Switch is manufactured in
Peregrine’s patented Ultra Thin Silicon (UTSi
) CMOS
process, offering the performance of GaAs with the economy
and integration of conventional CMOS.
PRELIMINARY SPECIFICATION
PE84244
Military Operating Temperature Range
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