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参数资料
| 型号： | PESD12VS1UA,115 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | DIODE ESD UNI-DIR 12V SC76 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 12V |
| 电压 - 击穿： | 13.3V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 带卷 (TR) |
PESD5V0S1UA; PESD12VS1UA
Unidirectional ESD protection for transient voltage
suppression
Rev. 01 — 9 February 2009
Product data sheet
1. Product pro?le
1.1 General description
Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small
Surface-Mounted Device (SMD) plastic package designed to protect one signal line
from the damage caused by ESD and transient overvoltage.
Table 1.
Product overview
Type number
Package
NXP
JEITA
Con?guration
PESD5V0S1UA
SOD323
SC-76
single
PESD12VS1UA
1.2 Features
I Transient Voltage Suppression (TVS)
protection of one line
I Max. peak pulse power: P PP = 890 W
I Low clamping voltage: V CL = 19 V
I Low leakage current: I RM = 300 nA
1.3 Applications
I Computers and peripherals
I Audio and video equipment
I Cellular handsets and accessories
1.4 Quick reference data
Table 2. Quick reference data
T amb = 25 ° C unless otherwise speci?ed.
I ESD protection up to 30 kV
I IEC 61000-4-2; level 4 (ESD)
I IEC 61000-4-5 (surge); I PP = 47 A
I AEC-Q101 quali?ed
I Communication systems
I Portable electronics
I Medical and industrial equipment
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V RWM
reverse standoff voltage
C d
PESD5V0S1UA
PESD12VS1UA
diode capacitance
PESD5V0S1UA
PESD12VS1UA
f = 1 MHz; V R = 0 V
-
-
-
-
-
-
480
160
5
12
530
180
V
V
pF
pF
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD12VS1UB | 制造商:NXP Semiconductors 功能描述:DIODE TVS SOD-523 制造商:NXP Semiconductors 功能描述:DIODE, TVS, SOD-523 |
| PESD12VS1UB T/R | 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD TAPE-7 RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PESD12VS1UB,115 | 功能描述:TVS 二极管 - 瞬态电压抑制器 DIODE ARRAY ESD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| PESD12VS1UB115 | 制造商:NXP Semiconductors 功能描述:DIODE ESD PROTECTION |
| PESD12VS1UJ | 制造商:NXP Semiconductors 功能描述:DIODE ESD LOW CAPACITANCE SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323, Diode Type:ESD Protection, Power Dissipation Pd:420mW, Clamping Voltage Vc Max:27V, Diode Case Style:SOD-323F, No. of Pins:2, MSL:MSL 1 - Unlimited , RoHS Compliant: Yes |
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