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| 型号： | PESD5V0L1BA,135 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 10/15页 |
| 文件大小： | 0K |
| 描述： | DIODE LOW ESD PROTECTION SOD323 |
| 标准包装： | 10,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 7V |
| 功率（瓦特）： | 500W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 带卷 (TR) |
| 其它名称： | PESD5V0L1BA135 |
NXP Semiconductors
PESDxL1BA series
Low capacitance bidirectional ESD protection diodes in SOD323
7. Application information
The PESDxL1BA series is designed for bidirectional protection of one signal line from the
damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxL1BA
series may be used on lines where the signal polarity is above and below ground. The
PESDxL1BA series provides a surge capability of up to 500 W per line for a 8/20 μ s
waveform.
line to be protected
PESDxL1BA
006aaa071
ground
Fig 9.
Typical application: Bidirectional protection of one signal line
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the protection device as close to the input terminal or connector as possible.
2. The path length between the protection device and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductor.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
boards, use ground vias.
PESDXL1BA_SER_2
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 20 August 2009
10 of 15
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD5V0L1BATR | 制造商:NXP Semiconductors 功能描述: |
| PESD5V0L1BSF | 制造商:NXP Semiconductors 功能描述:DIODE ESD 5V BIDIR 12PF SOD962 |
| PESD5V0L1BSF,315 | 功能描述:ESD 抑制器 8B MCU 10B A/D PWM BIDIRECTIONAL ESD RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| PESD5V0L1UA | 制造商:NXP Semiconductors 功能描述:DIODE ESD LOW CAPACITANCE SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323, Diode Type:ESD Protection, Clamping Voltage 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD323, Diode Type:ESD Protection, Clamping Voltage Vc Max:12V, Diode Case Style:SOD-323, No. of Pins:2, MSL:MSL 1 - Unlimited , RoHS Compliant: Yes |
| PESD5V0L1UA,115 | 功能描述:TVS 二极管 - 瞬态电压抑制器 ESD PROTECTION DIODE D5V0S1UJ/SOD RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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