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| 型号： | PESD5V0X1BL,315 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 6/11页 |
| 文件大小： | 0K |
| 描述： | DIODE ESD PROT BI-DIR 5V SOD-882 |
| 产品培训模块： | ESD Standards and Products |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6V |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-882 |
| 供应商设备封装： | SOD-882 |
| 包装： | 标准包装 |
| 产品目录页面： | 1511 (CN2011-ZH PDF) |
| 其它名称： | 568-4674-6 |
NXP Semiconductors
PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode
7. Application information
PESD5V0X1BL is designed for the protection of one bidirectional data or signal line from
the damage caused by ESD. The device may be used on lines where the signal polarities
are both, positive and negative with respect to ground.
line to be protected
PESD5V0X1BL
GND
006aab250
Fig 5.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been quali?ed in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test quali?cation for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0X1BL_2
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 July 2009
6 of 11
相关PDF资料 |
PDF描述 |
|---|---|
| PESD5V0X1BQ,115 | DIODE ESD PROT BI-DIR 5V SOT-663 |
| PESD5V0X1UAB,115 | DIODE ESD PROT UNIDIR 5V SOD523 |
| PESD5V0X1UALD,315 | DIODE ESD PROT UNIDIR 5V SOD882 |
| PESD5V0X1UB,135 | DIODE ESD ULT LOW CAP UNI SOD523 |
| PESD5V0X1ULD,315 | DIODE ESD PROT UNIDIR 5V SOD882 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PESD5V0X1BQ | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low capacitance bidirectional ESD protection diodes |
| PESD5V0X1BQ,115 | 功能描述:TVS二极管阵列 DIODE ARRAY ESD 1L EXTREM LOW RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| PESD5V0X1BT | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Ultra low capacitance bidirectional ESD protection diodes |
| PESD5V0X1BT,215 | 功能描述:TVS二极管阵列 DIODE ARRAY ESD 2L EXTREM LOW RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| PESD5V0X1U | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:High-performance ESD protection for sensitive ICs |
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