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参数资料
| 型号： | PESD9V0V4UK,132 |
| 厂商： | NXP Semiconductors |
| 文件页数： | 3/15页 |
| 文件大小： | 0K |
| 描述： | DIODE QUAD ESD PROTECT SOT891 |
| 标准包装： | 5,000 |
| 系列： | * |
NXP Semiconductors
PESDxV4UK series
Very low capacitance unidirectional quadruple ESD protection arrays
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
P PP
peak pulse power
PESD3V3V4UK
t p = 8/20 μ s
[1][2]
-
-
25
W
PESD5V0V4UK
PESD9V0V4UK
-
28
W
I PP
peak pulse current
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
t p = 8/20 μ s
[1][2]
-
-
-
-
2.7
2.5
1.5
A
A
A
Per device
T j
T amb
T stg
junction temperature
ambient temperature
storage temperature
-
? 55
? 65
150
+150
+150
° C
° C
° C
[1]
[2]
Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1, 3, 4, or 6 to pin 2.
Table 6. ESD maximum ratings
T amb = 25 ° C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
V ESD
electrostatic discharge voltage
IEC 61000-4-2
[1][2]
(contact discharge)
PESD3V3V4UK
PESD5V0V4UK
PESD9V0V4UK
-
-
-
10
15
8
kV
kV
kV
PESDxV4UK series
PESDxV4UK series
machine model
MIL-STD-883 (human
-
-
400
8
V
kV
body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1, 3, 4 or 6 to pin 2.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
> 15 kV (air); > 8 kV (contact)
> 4 kV
PESDXV4UK_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 25 August 2010
? NXP B.V. 2010. All rights reserved.
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