- 您现在的位置：买卖IC网 > PDF目录369994 > PF08123B PDF资料下载
参数资料
| 型号： | PF08123B |
| 文件页数： | 3/44页 |
| 文件大小： | 217K |
| 代理商： | PF08123B |
第1页第2页当前第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页
PF08107B
Rev.7, Dec. 2001, page 3 of 44
Electrical Characteristics for E-GSM mode
(Tc = 25
°
C)
Test conditions unless otherwise noted:
f = 880 to 915 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50
, Tc = 25
°
C,
Pulse operation with pulse width 577
μ
s and duty cycle 1:8 shall be used.
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
F
880
915
MHz
Band select (GSM active)
Vctl
2.0
2.8
V
Input power
Pin
–2
0
2
dBm
Control voltage range
Vapc
0.2
2.2
V
Supply voltage
Vdd
3.0
3.5
4.5
V
Total efficiency
η
T
43
50
%
2nd harmonic distortion
2nd H.D.
45
35
dBc
3rd harmonic distortion
3rd H.D.
45
35
dBc
4th~8th harmonic distortion
4th~8th H.D.
35
dBc
Input VSWR
VSWR (in)
1.5
3
Pout
GSM
= 35 dBm,
Vapc = controlled
Output power (1)
Pout (1)
35.0
36.0
dBm
Vapc = 2.2 V
Output power (2)
Pout (2)
33.5
34.5
dBm
Vdd = 3.1 V, Vapc = 2.2 V,
Tc = +70°C
Isolation
42
37
dBm
Vapc = 0.2 V, Pin = 2 dBm
Isolation at
DCS RF-output
when GSM is active
30
20
dBm
Pout
GSM
= 35 dBm,
Measured at f = 1760 to 1830 MHz
Switching time
t
r
, t
f
1
2
μ
s
Pout
GSM
= 0 to 35.0 dBm
Stability
No parasitic oscillation
Vdd = 3.1 to 4.5 V, Pout
≤
35.0 dBm,
Vapc
GSM
≤
2.2 V,
Rg = 50
, Tc = 25
°
C,
Output VSWR = 6 : 1 All phases
Load VSWR tolerance
No degradation
Vdd = 3.1 to 4.5 V,
Pout
GSM
≤
35.0 dBm,
Vapc
GSM
≤
2.2 V,
Rg = 50
, t = 20
sec., Tc = 25°C,
Output VSWR = 10 : 1 All phases
Pnoise1
80
dBm
f
0
= 915 MHz, f
rx
= f
0
+10 MHz,
Pout
GSM
= 35 dBm,
RES BW = 100 kHz
Noise power
Pnoise2
84
dBm
f
0
= 915
MHz, f
rx
= f
0
+20
MHz,
Pout
GSM
= 35
dBm,
RES BW = 100
kHz
相关PDF资料 |
PDF描述 |
|---|---|
| PF251 | 25Amp Fast Recover Rectifier 50 to 1000 Volts |
| PF252 | 25Amp Fast Recover Rectifier 50 to 1000 Volts |
| PF253 | 25Amp Fast Recover Rectifier 50 to 1000 Volts |
| PF254 | 25Amp Fast Recover Rectifier 50 to 1000 Volts |
| PF255 | 25Amp Fast Recover Rectifier 50 to 1000 Volts |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PF08127B | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone |
| PF08134B | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone |
| PF0830NL | 制造商:Pulse Electronics Corporation 功能描述:- Trays |
| PF083A | 功能描述:继电器插座与硬件 SOCKET -MK2P RELAY RoHS:否 制造商:TE Connectivity / Schrack 附件类型:Socket 相关继电器系列:RP, RT, RY 端接类型:PCB 极数:1 |
| PF-083A | 制造商:SONG CHUAN 功能描述:SOCKET PF-083A 制造商:Song Chuan Precision Company 功能描述:SOCKET PF-083A |
发布紧急采购，3分钟左右您将得到回复。