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参数资料
| 型号： | PF4650F |
| 厂商： | Sharp Corporation |
| 英文描述： | Double Ended Mold Type Phototransistors |
| 中文描述： | 双端模具类型光敏 |
| 文件页数： | 2/5页 |
| 文件大小： | 61K |
| 代理商： | PF4650F |
(Ta =25C)
Parameter
Symbol
Conditions
MIN.
0.95
0.55
0.55
0.6
0.4
TYP.
-
-
-
-
-
-
-
MAX.
2.80
1.85
1.2
3.05
2.0
Unit
Collector current
I
C
E
e
= 1mW/cm
2
V
CE
= 5V
mA
E
e
= 0.01mW/cm
2
V
CE
= 5V
E
e
= 0, V
CE
= 20V
E
e
= 0, V
CE
= 10V
E
e
=10mW/cm
2
I
C
=0.5mA
E
e
= 1mW/cm
2
I
C
= 2.5mA
I
C
= 0.1mA,
*2
E
e
= 0
I
C
= 0.01mA,
*2
E
e
= 0
Dark current
I
CEO
-
-
0.1
1.0
μ
A
V
CE(sat)
-
0.2
0.4
V
-
-
1.2
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
BV
CEO
BV
ECO
35
6
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
Peak sensitivity wavelength
λ
p
-
nm
t
r
t
f
t
r
t
f
40
35
2 000
1 500
-
Half intensity angle
θ
-
800
860
10
8
400
300
±20
Ambient temperature Ta (C)
Ambient temperature Ta (C)
PT4600
PT4600F
PT4650F
PT4610
PT4610F
PT4600/4600F/4650F
PT4610/PT4610F
PT4600/PT4600F
PT4650F
PT4610/PT4610F
PT4600/4610
PT4600F/4610F/4650F
PT4600/4600F/4650F
PT4610/4610F
V
CE
= 20V, I
C
=1mA
R
L
= 1k
V
CE
= 2V, I
C
= 10mA
R
L
=100
*2
*2
μ
s
Fig. 1-a Collector Power Dissipation vs. Ambient
temperature(PT4600/4600F/4650F)
80
Fig. 1-b
Collector Power Dissipation vs. Ambient
temperature
120
(PT4610/4610F)
Electro-optical Characteristics
Rise
Fall
Rise
Fall
Response time
Response time
Collector-emitter
saturation voltage
*2 E
e
: Irradiance by CIE standard light source
*2
*2
*2
*2
C
C
C
C
- 25
0
25
50
75
100
0
10
20
30
40
50
60
70
-25
0
25
50
75
100
125
0
20
40
60
80
100
85
85
PT4600/PT4600F/PT4610/PT4610F/PT4650F
I
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