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| 型号： | PF48F3P0ZTQ0 |
| 厂商： | Intel Corp. |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:12-10 |
| 中文描述： | 英特尔StrataFlash嵌入式存储器 |
| 文件页数： | 66/102页 |
| 文件大小： | 1609K |
| 代理商： | PF48F3P0ZTQ0 |
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1-Gbit P30 Family
April 2005
66
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
When a programming operation is executing, issuing the Program Suspend command requests the
WSM to suspend the programming algorithm at predetermined points. The device continues to
output Status Register data after the Program Suspend command is issued. Programming is
suspended when Status Register bits SR[7,2] are set. Suspend latency is specified in
Section 7.5,
“Program and Erase Characteristics” on page 45
.
To read data from the device, the Read Array command must be issued. Read Array, Read Status
Register, Read Device Identifier, CFI Query, and Program Resume are valid commands during a
program suspend.
During a program suspend, deasserting CE# places the device in standby, reducing active current.
V
PP
must remain at its programming level, and WP# must remain unchanged while in program
suspend. If RST# is asserted, the device is reset.
11.5
Program Resume
The Resume command instructs the device to continue programming, and automatically clears
Status Register bits SR[7,2]. This command can be written to any address. If error bits are set, the
Status Register should be cleared before issuing the next instruction. RST# must remain deasserted
(see
Figure 41, “Program Suspend/Resume Flowchart” on page 86
).
11.6
Program Protection
When V
PP
= V
IL
, absolute hardware write protection is provided for all device blocks. If V
PP
is at
or below V
PPLK
, programming operations halt and SR[3] is set indicating a V
PP
-level error. Block
lock registers are not affected by the voltage level on V
PP
; they may still be programmed and read,
even if V
PP
is less than V
PPLK
.
Figure 31.
Example VPP Supply Connections
Factory Programming with
V
PP
= V
PPH
Complete write/Erase Protection when
V
PP
≤
V
PPLK
VCC
VPP
VCC
VPP
Low Voltage and Factory Programming
Low-voltage Programming only
Logic Control of Device Protection
VCC
VPP
Low Voltage Programming Only
Full Device Protection Unavailable
VCC
VPP
≤
10K
V
PP
V
CC
V
CC
PROT #
V
CC
V
PP
=V
PPH
V
CC
相关PDF资料 |
PDF描述 |
|---|---|
| PF48F4P0ZTQ0 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle |
| PF48F0P0ZT00 | Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:41; Connector Shell Size:20; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket; Insert Arrangement:20-41 |
| PF48F2P0ZT00 | Circular Connector; No. of Contacts:41; Series:; Body Material:Aluminum; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:20-41 |
| PF48F3P0ZT00 | Intel StrataFlash Embedded Memory |
| PF48F4P0ZT00 | Circular Connector; No. of Contacts:21; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:22; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:22-21 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| PF48F4000M0Y0CEA | 制造商:Micron Technology Inc 功能描述:256BA/0BA SCSP 1.8 X16C HF - Trays |
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| PF48F4000P0ZBQ0A | 功能描述:IC FLASH 256MBIT 100NS 88-SCSP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:StrataFlash™ 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| PF48F4000P0ZBQE3 | 功能描述:IC FLASH 256MBIT 100NS 88SCSP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:Axcell™ 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
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