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参数资料
| 型号： | PH2907 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | PNP switching transistor |
| 中文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | PLASTIC, SC-43, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 45K |
| 代理商： | PH2907 |
1999 Apr 27
3
Philips Semiconductors
Product specification
PNP switching transistor
PH2907A
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
75
100
100
100
50
200
MAX.
10
10
50
300
400
1.6
1.3
2.6
8
30
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
50 V
I
E
= 0; V
CB
=
50 V; T
amb
= 150
°
C
I
C
= 0; V
EB
=
5 V
I
C
=
0.1 mA; V
CE
=
10 V
I
C
=
1 mA; V
CE
=
10 V
I
C
=
10 mA; V
CE
=
10 V
I
C
=
150 mA; V
CE
=
10 V; note 1
I
C
=
500 mA; V
CE
=
10 V; note 1
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
V
CEsat
collector-emitter saturation voltage I
C
=
150 mA; I
B
=
15 mA; note 1
mV
V
V
V
pF
pF
MHz
I
C
=
500 mA; I
B
=
50 mA; note 1
I
C
=
150 mA; I
B
=
15 mA; note 1
I
C
=
500 mA; I
B
=
50 mA; note 1
I
E
= i
e
= 0; V
CB
=
10 V; f = 100 kHz
I
C
= i
c
= 0; V
EB
=
2 V; f = 100 kHz
I
C
=
50 mA; V
CE
=
20 V; f = 100 MHz;
note 1
V
BEsat
base-emitter saturation voltage
C
c
C
e
f
T
collector capacitance
emitter capacitance
transition frequency
Switching times (between 10% and 90% levels);
see Fig.2
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
150 mA; I
Bon
=
15 mA;
I
Boff
= 15 mA
40
12
30
365
300
65
ns
ns
ns
ns
ns
ns
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相关代理商/技术参数 |
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| PH2907A,112 | 制造商:NXP Semiconductors 功能描述: |
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