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参数资料
| 型号： | PHB3N40E |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2.5 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SOT-404, 3 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 94K |
| 代理商： | PHB3N40E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP3N40E, PHB3N40E, PHD3N40E
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
10us
1ms
t / s
0.1s
10ms
Zth j-mb / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D =
t
p
t
p
T
T
P
t
D
D=
0
20
40
60
80
100
120
140
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
8
5 V
5.5 V
6 V
6.5 V
7 V
PHP2N40
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
10 V
20 V
VGS = 4.5 V
Tj = 25 C
10
100
1000
0.1
1
10
100
PHP2N40
100us
1 ms
10 ms
100ms
10 us
tp =
RDS(ON) = VDS/ID
Drain-source voltage, VDS (Volts)
Drain current, ID (Amps)
Tmb = 25 C
DC
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
6.5 V
7 V
10 V
VGS = 20 V
PHP2N40
Drain current, ID (Amps)
Drain-Source on resistance, RDS(ON) (Ohms)
6 V
5.5 V
5V
Tj = 25 C
August 1998
4
Rev 1.100
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