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参数资料
| 型号： | PHN70308 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | N-channel enhancement mode TrenchMOS transistor array(N沟道增强型TrenchMOS晶体管阵列) |
| 中文描述： | 5000 mA, 25 V, 7 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AH |
| 封装： | PLASTIC, SSOP-28 |
| 文件页数： | 3/10页 |
| 文件大小： | 172K |
| 代理商： | PHN70308 |
Philips Semiconductors
Product specification
N-channel enhancement mode
TrenchMOS transistor array
PHN70308
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 10
μ
A
MIN.
25
TYP. MAX. UNIT
-
-
V
V
DS
= V
; I
D
= 1 mA
V
GS
= 10 V; I
D
= 4 A
1.0
1.5
-
V
spindle FET
isolation FET
-
-
60
27
80
30
m
m
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 4.5 V; I
D
= 2 A
spindle FET
isolation FET
-
-
95
38
150
60
m
m
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 10 V; I
D
= 4 A; T
j
= 150C
spindle FET
isolation FET
-
-
-
-
-
102
46
10
10
0.1
136
51
100
100
0.5
m
m
nA
nA
mA
I
GSS
I
DSS
Gate source leakage current V
GS
=
±
20 V; V
DS
= 0 V
Zero gate voltage drain
current
V
DS
= 20 V; V
GS
= 0 V;
T
j
= 150C
Q
g(tot)
Total gate charge
I
D
= 1 A; V
DD
= 20 V; V
GS
= 10 V
spindle FET
isolation FET
spindle FET
isolation FET
spindle FET
isolation FET
-
-
-
-
-
-
5.4
17.6
0.4
1.4
1.6
5.7
-
-
-
-
-
-
nC
nC
nC
nC
nC
nC
Q
gs
Gate-source charge
Q
gd
Gate-drain (Miller) charge
t
on
Turn-on time
V
= 20 V; I
D
= 1 A; V
GS
= 10 V; R
G
= 6
;
resistive load
spindle FET
isolation FET
spindle FET
isolation FET
-
-
-
-
5.5
11
16
45
10
20
25
60
ns
ns
ns
ns
t
off
Turn-off time
C
iss
Input capacitance
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz
spindle FET
isolation FET
spindle FET
isolation FET
spindle FET
isolation FET
-
-
-
-
-
-
180
546
70
311
36
133
-
-
-
-
-
-
pF
pF
pF
pF
pF
pF
C
oss
Output capacitance
C
rss
Feedback capacitance
May 1999
3
Rev 1.000
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