参数资料
型号: PHP3N40E
厂商: NXP SEMICONDUCTORS
元件分类: JFETs
英文描述: PowerMOS transistors Avalanche energy rated
中文描述: 2.5 A, 400 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: TO-220AB, 3 PIN
文件页数: 2/10页
文件大小: 94K
代理商: PHP3N40E
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP3N40E, PHB3N40E, PHD3N40E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 0.6 A;
t
p
= 0.5 ms; T
j
prior to avalanche = 25C;
V
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
120
UNIT
mJ
E
AR
Repetitive avalanche energy
2
I
= 2.5 A; t
= 1
μ
s; T
prior to
-
3
mJ
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
I
AS
, I
AR
Repetitive and non-repetitive
avalanche current
-
2.5
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
2.5
K/W
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint
-
-
60
50
-
-
K/W
K/W
2
pulse width and repetition rate limited by T
j
max.
August 1998
2
Rev 1.100
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