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参数资料
| 型号： | PHP6N60E |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 5.4 A, 600 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | TO-220AB, 3 PIN |
| 文件页数： | 1/9页 |
| 文件大小： | 74K |
| 代理商： | PHP6N60E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP6N60E, PHB6N60E
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
Stable off-state characteristics
High thermal cycling performance
Low thermal resistance
V
DSS
= 600 V
I
D
= 5.4 A
R
DS(ON)
≤
1.8
GENERAL DESCRIPTION
N-channel,enhancement modefield-effectpower transistor,intendedforusein off-lineswitchedmode powersupplies,
T.V.and computer monitor powersupplies, d.c. tod.c.converters, motor controlcircuits and generalpurpose switching
applications.
The PHP6N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB6N60E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
600
600
±
30
5.4
3.4
21
125
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
d
g
s
1 2 3
tab
1
3
tab
2
December 1998
1
Rev 1.300
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PHP6NA60E | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistors Low capacitance Avalanche energy rated |
| PHP6ND50E | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
| PHP-6P4C-5 | 制造商:POWER DYNAMICS 功能描述: 制造商:Power Dynamics Inc 功能描述: |
| PHP-6P6C-5 | 制造商:POWER DYNAMICS 功能描述: 制造商:Power Dynamics Inc 功能描述: |
| PHP71NQ03LT | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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