参数资料
型号: PI3L100L
厂商: Pericom Semiconductor Corp.
英文描述: 3.3V, Wide Bandwidth Quad 2:1 Mux/Demux LanSwitch
中文描述: 3.3,宽带四2:1复用/解复用LanSwitch
文件页数: 2/6页
文件大小: 74K
代理商: PI3L100L
2
PI3L100
3.3V, Wide Bandwidth Quad 2:1, Mux/Demux LanSwitch
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PS8504 11/13/00
Capacitance
(T
A
= 25°C, f = 1 MHz)
Parameters
(1)
C
IN
C
OFF
C
ON
C
OFF
Description
Input Capacitance
Capacitance, Switch Off (Y)
Capacitance, Switch On
Capacitance, Switch Off (A/B)
Test Conditions
V
IN
= 0V
V
IN
= 0V
V
IN
= 0V
V
IN
= 0V
Typ
Max.
3
17
25
8
Units
pF
pF
pF
pF
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions above those indicated in the operational sec-
tions of this specification is not implied. Exposure
to absolute maximum rating conditions for ex-
tended periods may affect reliability.
DC Electrical Characteristics
(Over the Operating Range, T
A
= 0°C to +70°C, V
CC
= 3.3V ±5%)
Notes:
1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for applicable device type.
2. Typical values are at V
CC
= 3.3V, T
A
= 25°C ambient temperature.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. V
ON
(min) value is at V
CC
= 3.3V, T
A
= 70°C.
Storage Temperature ............................................................. –65°C to +150°C
Ambient Temperature with Power Applied................................. 0°C to +70°C
Supply Voltage to Ground Potential (Inputs & Vcc Only) ...... –0.5V to +4.6V
Supply Voltage to Ground Potential (Outputs & D/O Only) ... –0.5V to +4.6V
DC Input Voltage ..................................................................... –0.5V to +4.6V
DC Output Current ............................................................................... 120 mA
Power Dissipation......................................................................................0.5W
s
e
m
a
a
P
n
o
D
)
o
n
o
C
t
T
.
M
p
y
T
)
.
a
M
s
U
V
H
I
e
a
V
H
G
I
H
t
p
n
l
e
L
H
G
I
H
c
o
L
d
e
a
G
0
V
V
L
I
e
a
V
W
O
L
t
p
n
l
e
L
W
O
L
c
o
L
d
e
a
G
5
8
I
H
I
t
e
C
H
G
I
H
t
p
n
V
C
C
V
,
a
M
=
N
I
V
=
C
C
1
±
μ
A
I
L
I
t
e
C
W
O
L
t
p
n
V
C
C
0
V
,
a
M
=
N
I
D
N
G
=
1
±
I
H
Z
O
t
e
C
t
p
O
e
a
d
e
p
m
I
h
g
H
B
,
A
V
C
C
1
±
V
K
I
e
a
V
e
d
o
D
p
m
a
C
V
C
C
I
M
=
N
I
A
m
8
1
=
2
V
I
S
O
t
e
C
t
c
C
t
h
S
)
V
=
)
A
(
B
,
0
=
)
B
(
A
C
C
0
0
1
A
m
V
H
s
l
o
C
t
s
H
t
p
n
0
5
1
V
m
R
N
O
)
e
a
R
n
O
h
c
w
S
V
C
C
V
,
M
=
N
I
I
0
=
N
O
A
m
8
4
=
5
7
V
C
C
V
,
M
=
N
I
I
4
=
N
O
A
m
5
1
=
0
1
5
1
R
N
O
h
c
M
e
a
R
n
O
V
N
I
W
O
L
=
E
,
0
=
Note:
1. This parameter is determined by device characterization but is not production tested.
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