参数资料
型号: PI74FCT541ATSE
厂商: Pericom
文件页数: 3/8页
文件大小: 0K
描述: IC BUFF/DVR 8BIT N-INV 20SOIC
标准包装: 38
系列: 74FCT
逻辑类型: 缓冲器/线路驱动器,非反相
元件数: 1
每个元件的位元数: 8
输出电流高,低: 15mA,64mA
电源电压: 4.75 V ~ 5.25 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 20-SOIC(0.295",7.50mm 宽)
供应商设备封装: 20-SOIC
包装: 管件
3
PS2011G
11/10/08
PI74FCT244T/2244T
PI74FCT541T/2541T
Fast CMOS Non-Inverting Octal Buffer/Line Drivers
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other con-
ditions above those indicated in the operational
sections of this specication is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect reliability.
DC Electrical Characteristics (Over the Operating Range, TA = –40°C to +85°C, VCC = 5.0V ± 5%)
Parameters
Description
Test Conditions(1)
Min.
Typ(2)
Max.
Units
VOH
Output HIGH Voltage
VCC = Min., VIN = VIH or VIL
IOH = –15.0mA
2.4
3.0
V
VOL
Output LOW Current
VCC = Min., VIN = VIH or VIL
IOL = 64mA
0.3
0.55
VOL
Output LOW Current
VCC = Min., VIN = VIH or VIL
IOL = 12mA
(25ΩSeries)
0.3
0.50
VIH
Input HIGH Voltage
Guaranteed Logic HIGH Level
2.0
VIL
Input LOW Voltage
Guaranteed Logic LOW Level
0.8
IIH
Input HIGH Current
VCC = Max.
VIN = VCC
1
μA
IIL
Input LOW Current
VCC = Max.
VIN = GND
–1
IOZH
High Impedance
VCC = MAX.
VOUT = 2.7V
1
IOZL
Output Current
VOUT = 0.5V
–1
VIK
Clamp Diode Voltage
VCC = Min., IIN = –18mA
–0.7
–1.2
V
IOFF
Power Down Disable
VCC = GND, VOUT = 4.5V
100
μA
IOS
Short Circuit Current
VCC = Max.(3), VOUT = GND
–60
–120
mA
VH
Input Hysteresis
200
Notes:
1. For Max. or Min. conditions, use appropriate value specied under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
Capacitance (TA = 25°C, f = 1 MHz)
Parameters(1)
Description
Test Conditions
Typ.
Max.
Units
CIN
Input Capacitance
VIN = 0V
6
10
pF
COUT
Output Capacitance
VOUT = 0V
8
12
Notes:
1. This parameter is determined by device characterization but is not production tested.
Storage Temperature ............................................................. –65°C to +150°C
Ambient Temperature with Power Applied .............................-40°C to +85°C
Supply Voltage to Ground Potential (Inputs & Vcc Only) ...... –0.5V to +7.0V
Supply Voltage to Ground Potential (Outputs & D/O Only) ... –0.5V to +7.0V
DC Input Voltage ..................................................................... –0.5V to +7.0V
DC Output Current................................................................................ 120mA
Power Dissipation .................................................................................... 0.5W
08-0291
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