参数资料
型号: PI74FCT827T
厂商: Pericom Semiconductor Corp.
英文描述: Fast CMOS 10-Bit Buffers
中文描述: 快速CMOS 10位缓冲器
文件页数: 3/5页
文件大小: 105K
代理商: PI74FCT827T
3
PS2029B 10/27/98
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PI74FCT827/828T
(25
Series) P174FCT2827/2828T
10-BIT BUFFERS
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature .................................................................–65°C to +150°C
Ambient Temperature with Power Applied..................................-40°C to +85°C
Supply Voltage to Ground Potential (Inputs & Vcc Only) .......... –0.5V to +7.0V
Supply Voltage to Ground Potential (Outputs & D/O Only) ....... –0.5V to +7.0V
DC Input Voltage ......................................................................... –0.5V to +7.0V
DC Output Current ....................................................................................120mA
Power Dissipation......................................................................................... 0.5W
Note:
Stresses greater than those listed under
MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only
and functional operation of the device at these or
any other conditions above those indicated in
the operational sections of this specification is
not implied. Exposure to absolute maximum
rating conditions for extended periods may
affect reliability.
DC Electrical Characteristics
(Over the Operating Range, T
A
= –40°C to +85°C, V
CC
= 5.0V ± 5%)
Parameters Description
Test Conditions
(1)
Min. Typ
(2)
Max. Units
V
OH
Output HIGH Voltage
V
CC
= Min., V
IN
= V
IH
or V
IL
I
OH
= –15.0mA
2.4
3.0
V
V
OL
Output LOW Current
V
CC
= Min., V
IN
= V
IH
or V
IL
I
OL
= 48mA
0.3
0.50
V
V
OL
Output LOW Current
V
CC
= Min., V
IN
= V
IH
or V
IL
I
OL
= 12mA (25
Series)
0.3
0.50
V
V
IH
Input HIGH Voltage
Guaranteed Logic HIGH Level
2.0
V
V
IL
Input LOW Voltage
Guaranteed Logic LOW Level
0.8
V
I
IH
Input HIGH Current
V
CC
= Max.
V
IN
= V
CC
1
μA
I
IL
Input LOW Current
V
CC
= Max.
V
IN
= GND
–1
μA
I
OZH
High Impedance
V
CC
= M
AX
.
V
OUT
= 2.7V
1
μA
I
OZL
Output Current
V
OUT
= 0.5V
–1
μA
V
IK
Clamp Diode Voltage
V
CC
= Min., I
IN
= –18mA
–0.7
–1.2
V
I
OFF
Power Down Disable
V
CC
= GND, V
OUT
= 4.5V
100
μA
I
OS
Short Circuit Current
V
CC
= Max.
(3)
, V
OUT
= GND
–60
–120
mA
V
H
Input Hysteresis
200
mV
Capacitance
(T
A
= 25°C, f = 1 MHz)
Parameters
(4)
Description
Test Conditions
Typ
Max.
Units
C
IN
Input Capacitance
V
IN
= 0V
6
10
pF
C
OUT
Output Capacitance
V
OUT
= 0V
8
12
pF
Notes:
1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at Vcc = 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. This parameter is determined by device characterization but is not production tested.
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