参数资料
型号: PIC10F220T-I/OT
厂商: Microchip Technology
文件页数: 1/6页
文件大小: 0K
描述: IC PIC MCU FLASH 256X12 SOT23-6
产品培训模块: Asynchronous Stimulus
8-bit PIC® Microcontroller Portfolio
标准包装: 1
系列: PIC® 10F
核心处理器: PIC
芯体尺寸: 8-位
速度: 8MHz
外围设备: POR,WDT
输入/输出数: 4
程序存储器容量: 384B(256 x 12)
程序存储器类型: 闪存
RAM 容量: 16 x 8
电压 - 电源 (Vcc/Vdd): 2 V ~ 5.5 V
数据转换器: A/D 2x8b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: SOT-23-6
包装: 标准包装
产品目录页面: 637 (CN2011-ZH PDF)
配用: AC162070-ND - HEADER INTRFC MPLAB ICD2 8/14P
XLT06SOT-ND - SOCKET TRAN ICE 6SOT W/CABLE
AC163020-ND - ADAPTER PROGRAMMER PIC10F2XX
AC164320-ND - MODULE SKT MPLAB PM3 80TQFP
其它名称: PIC10F220T-I/OTDKR
2006 Microchip Technology Inc.
DS80271A-page 1
PIC10F220/222
The PIC10F220/222 parts you have received conform
functionally to the Device Data Sheet (DS41270B),
except for the anomalies described below.
All issues listed here will be addressed in future
revisions of the PIC10F220/222 silicon. Where noted,
problems apply to listed revision only.
1.
Module: Analog-to-Digital (A/D)
Converter
PIC10F220/222 silicon Rev. A1. The A/D Converter
does not meet the design target. The specifications
listed below in Table 10-6 supersede Table 10-6 in
DS41270B.
TABLE 10-6:
A/D CONVERTER CHARACTERISTICS AT 8 BITS
Param
No.
Sym
Characteristic
Min
Typ
Max
Units
Conditions
A03
EIL
Integral Error
±2
Lsb
VDD = 5.0V 25°C
A04
EDL
Differential Error
-1
≤ EDL ≤2Lsb
VDD = 5.0V 25°C
A06
EOFF
Offset Error
±2
LSb
VDD = 5.0V 25°C
A07
EGN
Gain Error
±2
LSb
VDD = 5.0V 25°C
A10
Monotonicity
not warranted(1)
——
VSS
≤ VAIN ≤ VDD
*
These parameters are characterized but not tested.
Data in the “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design
guidance only are not tested.
Note 1:
This will be addressed in future silicon revisions.
PIC10F220/222 Rev. A Silicon Errata
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