参数资料
型号: PIC12CE518T-04I/SN
厂商: Microchip Technology
文件页数: 91/113页
文件大小: 0K
描述: IC MCU OTP 512X12 W/EE 8SOIC
产品培训模块: Asynchronous Stimulus
标准包装: 3,300
系列: PIC® 12C
核心处理器: PIC
芯体尺寸: 8-位
速度: 4MHz
外围设备: POR,WDT
输入/输出数: 5
程序存储器容量: 768B(512 x 12)
程序存储器类型: OTP
EEPROM 大小: 16 x 8
RAM 容量: 25 x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 5.5 V
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
配用: 309-1046-ND - ADAPTER 8-SOIC TO 8-DIP
309-1045-ND - ADAPTER 8-SOIC TO 8-DIP
其它名称: PIC12CE518T-04ISN
1999 Microchip Technology Inc.
DS40139E-page 79
PIC12C5XX
13.0
ELECTRICAL CHARACTERISTICS - PIC12C508A/PIC12C509A/
PIC12LC508A/PIC12LC509A/PIC12CR509A/PIC12CE518/PIC12CE519/
PIC12LCE518/PIC12LCE519/PIC12LCR509A
Absolute Maximum Ratings
Ambient Temperature under bias ........................................................................................................... –40°C to +125°C
Storage Temperature ............................................................................................................................. –65°C to +150°C
Voltage on VDD with respect to VSS .................................................................................................................0 to +7.0 V
Voltage on MCLR with respect to VSS...............................................................................................................0 to +14 V
Voltage on all other pins with respect to VSS ............................................................................... –0.3 V to (VDD + 0.3 V)
Total Power Dissipation(1) .................................................................................................................................... 700 mW
Max. Current out of VSS pin .................................................................................................................................. 200 mA
Max. Current into VDD pin ..................................................................................................................................... 150 mA
Input Clamp Current, IIK (VI < 0 or VI > VDD)
.................................................................................................................... ±20 mA
Output Clamp Current, IOK (VO < 0 or VO > VDD)
............................................................................................................. ±20 mA
Max. Output Current sunk by any I/O pin ................................................................................................................ 25 mA
Max. Output Current sourced by any I/O pin........................................................................................................... 25 mA
Max. Output Current sourced by I/O port (GPIO) ................................................................................................. 100 mA
Max. Output Current sunk by I/O port (GPIO )...................................................................................................... 100 mA
Note 1: Power Dissipation is calculated as follows: PDIS = VDD x {IDD -
∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOL x IOL)
NOTICE: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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