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型号： PIC12F519T-I/MC
厂商： Microchip Technology
文件页数： 62/96页
文件大小： 0K
描述： IC PIC MCU FLASH 1KX12 8DFN
产品培训模块： Asynchronous Stimulus
标准包装： 3,300
系列： PIC® 12F
核心处理器： PIC
芯体尺寸： 8-位
速度： 8MHz
外围设备： POR，WDT
输入/输出数： 5
程序存储器容量： 1.5KB（1K x 12）
程序存储器类型： 闪存
RAM 容量： 41 x 8
电压 - 电源 (Vcc/Vdd)： 2 V ~ 5.5 V
振荡器型： 内部
工作温度： -40°C ~ 85°C
封装/外壳： 8-VFDFN 裸露焊盘
包装： 带卷 (TR)
配用： AC164334-ND - MODULE SOCKET FOR 8L 2X3MM DFN
XLT08DFN2-ND - SOCKET TRANSITION ICE 14DIP/8DFN
其它名称： PIC12F519T-I/MCTR
2008 Microchip Technology Inc.
DS41319B-page 63
PIC12F519
11.1
DC Characteristics
TABLE 11-1:
DC CHARACTERISTICS: PIC12F519 (INDUSTRIAL)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise specified)
Operating Temperature -40
°C ≤ TA ≤ +85°C (industrial)
Param
No.
Sym.
Characteristic
Min.
Typ(1)
Max.
Units
Conditions
D001
VDD
Supply Voltage
2.0
5.5
V
See Figure 11-1
D002
VDR
RAM Data Retention Voltage(2)
—
1.5*
—
V
Device in Sleep mode
D003
VPOR VDD Start Voltage to ensure
Power-on Reset
—
Vss
—
V
See Section 8.4 “Power-on
Reset (POR)”
for details
D004
SVDD VDD Rise Rate to ensure
Power-on Reset
0.05*
—
V/ms See Section 8.4 “Power-on
Reset (POR)”
for details
D005
IDDP
Supply Current
During Prog/
Erase.
—
250*
—
μA
D010
IDD
Supply Current(3,4)
—
175
400
250
700
μA
FOSC = 4 MHz, VDD = 2.0V
FOSC = 4 MHz, VDD = 5.0V
—
250
0.75
400
1.2
μA
mA
FOSC = 8 MHz, VDD = 2.0V
FOSC = 8 MHz, VDD = 5.0V
—
11
38
20
54
μA
FOSC = 32 kHz, VDD = 2.0V
FOSC = 32 kHz, VDD = 5.0V
D020
IPD
Power-down Current(5)
—
0.1
0.35
1.2
2.2
μA
VDD = 2.0V
VDD = 5.0V
D022
IWDT
WDT Current
—
1.0
7.0
3.0
16.0
μA
VDD = 2.0V
VDD = 5.0V
* These parameters are characterized but not tested.
Note 1:
Data in the Typical (“Typ”) column is based on characterization results at 25
°C. This data is for design
guidance only and is not tested.
2:
This is the limit to which VDD can be lowered in Sleep mode without losing RAM data.
3:
The supply current is mainly a function of the operating voltage and frequency. Other factors such as bus
loading, oscillator type, bus rate, internal code execution pattern and temperature also have an impact on
the current consumption.
4:
The test conditions for all IDD measurements in active operation mode are:
OSC1 = external square wave, from rail-to-rail for external clock modes; all I/O pins tri-stated, pulled to
VSS, T0CKI = VDD, MCLR = VDD; WDT enabled/disabled as specified.
5:
For standby current measurements, the conditions are the same as IDD, except that the device is in Sleep
mode. If a module current is listed, the current is for that specific module enabled and the device in Sleep.
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