参数资料
型号: PIC16F630T-I/SL
厂商: Microchip Technology
文件页数: 117/132页
文件大小: 0K
描述: IC MCU FLASH 1KX14 14SOIC
产品培训模块: Asynchronous Stimulus
标准包装: 2,600
系列: PIC® 16F
核心处理器: PIC
芯体尺寸: 8-位
速度: 20MHz
外围设备: 欠压检测/复位,POR,WDT
输入/输出数: 12
程序存储器容量: 1.75KB(1K x 14)
程序存储器类型: 闪存
EEPROM 大小: 128 x 8
RAM 容量: 64 x 8
电压 - 电源 (Vcc/Vdd): 2 V ~ 5.5 V
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
包装: 带卷 (TR)
2010 Microchip Technology Inc.
DS40039F-page 85
PIC16F630/676
12.0 ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
Ambient temperature under bias........................................................................................................... -40 to +125°C
Storage temperature ........................................................................................................................ -65°C to +150°C
Voltage on VDD with respect to VSS ..................................................................................................... -0.3 to +6.5V
Voltage on MCLR with respect to Vss ..................................................................................................-0.3 to +13.5V
Voltage on all other pins with respect to VSS ........................................................................... -0.3V to (VDD + 0.3V)
Total power dissipation(1) ............................................................................................................................... 800 mW
Maximum current out of VSS pin ..................................................................................................................... 300 mA
Maximum current into VDD pin ........................................................................................................................ 250 mA
Input clamp current, IIK (VI < 0 or VI > VDD)
20 mA
Output clamp current, IOK (Vo < 0 or Vo >VDD)
20 mA
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by PORTA and PORTC (combined) .......................................................................... 200 mA
Maximum current sourced PORTA and PORTC (combined) .......................................................................... 200 mA
Note 1: Power dissipation is calculated as follows: PDIS = VDD x {IDD -
IOH} + {(VDD-VOH) x IOH} + (VOl x IOL).
NOTICE: Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note:
Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
Thus, a series resistor of 50-100 should be used when applying a “low” level to the MCLR pin, rather than
pulling this pin directly to VSS.
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