参数资料
型号: PIC16F84A-20I/SO
厂商: Microchip Technology
文件页数: 47/81页
文件大小: 0K
描述: IC MCU FLASH 1KX14 EE 18SOIC
产品培训模块: Asynchronous Stimulus
8-bit PIC® Microcontroller Portfolio
标准包装: 42
系列: PIC® 16F
核心处理器: PIC
芯体尺寸: 8-位
速度: 20MHz
外围设备: POR,WDT
输入/输出数: 13
程序存储器容量: 1.75KB(1K x 14)
程序存储器类型: 闪存
EEPROM 大小: 64 x 8
RAM 容量: 68 x 8
电压 - 电源 (Vcc/Vdd): 4 V ~ 5.5 V
振荡器型: 外部
工作温度: -40°C ~ 85°C
封装/外壳: 18-SOIC(0.295",7.50mm 宽)
包装: 管件
产品目录页面: 638 (CN2011-ZH PDF)
配用: I3-DB16F84A-ND - BOARD DAUGHTER ICEPIC3
309-1075-ND - ADAPTER 18-SOIC TO 18-SOIC
309-1011-ND - ADAPTER 18-SOIC TO 18-DIP
309-1010-ND - ADAPTER 18-SOIC TO 18-DIP
DVA12XP080-ND - ADAPTER DEVICE FOR MPLAB-ICE
AC164010-ND - MODULE SKT PROMATEII DIP/SOIC
2001 Microchip Technology Inc.
DS35007B-page 49
PIC16F84A
9.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Ambient temperature under bias............................................................................................................ .-55
°C to +125°C
Storage temperature .............................................................................................................................. -65
°C to +150°C
Voltage on any pin with respect to VSS (except VDD, MCLR, and RA4) ......................................... -0.3V to (VDD + 0.3V)
Voltage on VDD with respect to VSS ........................................................................................................... -0.3 to +7.5V
Voltage on MCLR with respect to VSS(1) .......................................................................................................-0.3 to +14V
Voltage on RA4 with respect to VSS ........................................................................................................... -0.3 to +8.5V
Total power dissipation(2) ..................................................................................................................................... 800 mW
Maximum current out of VSS pin ...........................................................................................................................150 mA
Maximum current into VDD pin .............................................................................................................................. 100 mA
Input clamp current, IIK (VI < 0 or VI > VDD)
..................................................................................................................... ± 20 mA
Output clamp current, IOK (VO < 0 or VO > VDD)
............................................................................................................. ± 20 mA
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin .................................................................................................... 25 mA
Maximum current sunk by PORTA ..........................................................................................................................80 mA
Maximum current sourced by PORTA..................................................................................................................... 50 mA
Maximum current sunk by PORTB........................................................................................................................ 150 mA
Maximum current sourced by PORTB .................................................................................................................. 100 mA
Note 1: Voltage spikes below VSS at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
Thus, a series resistor of 50-100
should be used when applying a “low” level to the MCLR pin rather than
pulling this pin directly to VSS.
2: Power dissipation is calculated as follows: Pdis = VDD x {IDD -
∑ IOH} + ∑ {(VDD-VOH) x IOH} + ∑(VOl x IOL).
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above
those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
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PIC16F84AT-04/SO 功能描述:8位微控制器 -MCU 1.75KB 68 RAM 13 I/O 4MHz SOIC18 RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
PIC16F84AT-04/SS 功能描述:8位微控制器 -MCU 1.75KB 68 RAM 13 I/O 4MHz SSOP20 RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
PIC16F84AT-04E/SO 功能描述:8位微控制器 -MCU 1.75KB 68 RAM 13 I/O RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
PIC16F84AT-04E/SS 功能描述:8位微控制器 -MCU 1.75KB 68 RAM 13 I/O RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
PIC16F84AT-04I/SO 功能描述:8位微控制器 -MCU 1.75KB 68 RAM 13 I/O 4MHz Ind Temp SOIC18 RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT