参数资料
型号: PIC16LF1937-E/MV
厂商: Microchip Technology
文件页数: 8/14页
文件大小: 0K
描述: IC PIC MCU FLASH 512KX14 40UQFN
标准包装: 73
系列: PIC® XLP™ 16F
核心处理器: PIC
芯体尺寸: 8-位
速度: 32MHz
连通性: I²C,LIN,SPI,UART/USART
外围设备: 欠压检测/复位,LCD,POR,PWM,WDT
输入/输出数: 36
程序存储器容量: 14KB(8K x 14)
程序存储器类型: 闪存
EEPROM 大小: 256 x 8
RAM 容量: 512 x 8
电压 - 电源 (Vcc/Vdd): 1.8 V ~ 3.6 V
数据转换器: A/D 14x10b
振荡器型: 内部
工作温度: -40°C ~ 125°C
封装/外壳: 40-UFQFN 裸露焊盘
包装: 管件
2009-2012 Microchip Technology Inc.
DS80479K-page 3
PIC16(L)F1934/1936/1937
Silicon Errata Issues
1.
Module: Data EE Memory
1.1 Data EE Memory Endurance
The typical write/erase endurance of the data EE
memory is limited to 10k cycles.
Work around
Use error correction method that stores data in
multiple locations.
Affected Silicon Revisions
1.2 Data EE Write at Min. VDD
The minimum voltage required for a data EE write
operation is 2.0 volts.
Work around
None.
Affected Silicon Revisions
2.
Module: Program Flash Memory (PFM)
2.1 Program Flash Memory Endurance
The typical write/erase endurance of the PFM is
limited to 1k cycles when VDD is above 3.0 volts.
Endurance degrades when VDD is below 3V.
Work around
Use an error correction method that stores data
in multiple locations.
Affected Silicon Revisions
2.2 Program Flash Memory Writes at Min. VDD
The minimum voltage required for a PFM write
operation is 2.0V.
Work around
None.
Affected Silicon Revisions
3.
Module: Capture Compare PWM (CCP)
3.1 Dead-Band Delay
With the ECCP configured for PWM Half-Bridge
mode and a dead-band delay greater than or equal
to the PWM duty cycle; unpredictable waveforms
will result.
Work around
Make sure the dead-band delay is always less
than the PWM duty cycle.
Affected Silicon Revisions
3.2 ECCP2 Switching Between Single, Half-
Bridge and Full-Bridge PWM modes
Switching PWM mode during the current PWM
cycle by modifying the P2M<1:0> bits in the
CCP2CON register will cause the PWM outputs to
switch immediately and not on the start of the next
PWM cycle.
Work around
None.
Affected Silicon Revisions
3.3 ECCP2 Changing Direction in Full-Bridge
PWM modes
When
changing
direction,
the
active
and
modulated outputs will improperly go active at the
same time and the dead time does not occur,
which can lead to large shoot-through currents.
Work around
None.
Affected Silicon Revisions
Note:
This document summarizes all silicon
errata issues from all revisions of silicon,
previous as well as current. Only the
issues indicated by the shaded column in
the following tables apply to the current
silicon revision (A8).
A2
A3
A5
A6
A7
A8
XX
X
A2
A3
A5
A6
A7
A8
XX
X
XX
X
A2
A3
A5
A6
A7
A8
XX
X
A2
A3
A5
A6
A7
A8
XX
X
XX
X
A2
A3
A5
A6
A7
A8
XX
X
XX
X
A2
A3
A5
A6
A7
A8
XX
X
XX
X
A2
A3
A5
A6
A7
A8
XX
X
XX
X
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PIC16LF1937-I/ML 功能描述:8位微控制器 -MCU 14KB Flash, 512B RAM 256B EE LCD 1.8-5.5V RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
PIC16LF1937-I/MV 功能描述:8位微控制器 -MCU 14KB Flash EEPROM 256b nanoWatt RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
PIC16LF1937-I/P 功能描述:8位微控制器 -MCU 14KB Flash, 512B RAM 256B EE LCD 1.8-5.5V RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
PIC16LF1937-I/PT 功能描述:8位微控制器 -MCU 14KB Flash, 512B RAM 256B EE LCD 1.8-5.5V RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
PIC16LF1937T-I/ML 功能描述:8位微控制器 -MCU 14KB Flash 512B RAM 256B EE LCD 1.8-5.5V RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT