参数资料
型号: PIC24FJ256GA110T-I/PT
厂商: Microchip Technology
文件页数: 13/18页
文件大小: 0K
描述: IC PIC MCU FLASH 256K 100TQFP
标准包装: 1,200
系列: PIC® 24F
核心处理器: PIC
芯体尺寸: 16-位
速度: 32MHz
连通性: I²C,PMP,SPI,UART/USART
外围设备: 欠压检测/复位,LVD,POR,PWM,WDT
输入/输出数: 85
程序存储器容量: 256KB(85.5K x 24)
程序存储器类型: 闪存
RAM 容量: 16K x 8
电压 - 电源 (Vcc/Vdd): 2 V ~ 3.6 V
数据转换器: A/D 16x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 100-TQFP
包装: 带卷 (TR)
配用: MA240015-ND - BOARD MCV PIM FOR 24F256GA
DM240011-ND - KIT STARTER MPLAB FOR PIC24F MCU
AC164333-ND - MODULE SKT FOR PM3 100QFP
其它名称: PIC24FJ256GA110T-I/PTTR
PIC24FJ256GA110 FAMILY
DS80368L-page 4
2008-2011 Microchip Technology Inc.
Silicon Errata Issues
1.
Module: Core (RAM Operation)
If a RAM read is performed on the instruction
immediately prior to enabling Doze mode, an extra
read event may occur when Doze mode is
enabled. This has no effect on most SFRs and on
user RAM space. However, this could cause regis-
ters which also perform some action on a read
(such as auto-incrementing a pointer or removing
data from a FIFO buffer) to repeat that action,
possibly resulting in lost data or unexpected
operation.
Work around
Avoid reading registers which perform a second-
ary action (e.g., UART and SPI FIFO buffers, and
the RTCVAL registers) immediately prior to
entering Doze mode.
If this cannot be avoided, execute a NOP
instruction before entering Doze mode.
Affected Silicon Revisions
2.
Module: Core (BOR)
When the on-chip regulator is enabled (ENVREG
tied to VDD), a BOR event may spontaneously
occur under the following circumstances:
VDD is less than 2.5V, and either:
the internal band gap reference is being used as
a reference with the A/D Converter
(AD1PCFGH<1> or <0> = 0) or comparators
(CMxCON<1:0> = 11); or
the CTMU module is enabled.
Work around
Limit the following activities to only those times
when the on-chip regulator is not in Tracking mode
(LVDIF (IFS4<8>) = 0):
enabling the CTMU module;
selecting the internal band gap as a reference
for the A/D Converter or the comparators.
Affected Silicon Revisions
3.
Module: JTAG (Device Programming)
The JTAGEN Configuration bit can be pro-
grammed to ‘0’ while using the JTAG interface for
device programming. This may cause a situation
where JTAG programming can lock itself out of
being able to program the device.
Work around
None.
Affected Silicon Revisions
4
Module: UART
When the UART is operating using two Stop bits
(STSEL = 1), it may sample the first Stop bit
instead of the second one. If the device being com-
municated with is one using one Stop bit in its
communications, this may lead to framing errors.
Work around
None.
Affected Silicon Revisions
5.
Module: I/O (PORTB)
When RB5 is configured as an open-drain output,
it remains in a high-impedance state. The settings
of LATB5 and TRISB5 have no effect on the pin’s
state.
Work around
If open-drain operation is not required, configure
RB5 as a regular I/O (ODCB<5> = 0).
If open-drain operation is required, there are two
options:
select a different I/O pin for the open-drain
function; or
place an external transistor on the pin, and
configure the pin as a regular I/O.
Affected Silicon Revisions
Note:
This document summarizes all silicon
errata issues from all revisions of silicon,
previous as well as current. Only the
issues indicated by the shaded column in
the following tables apply to the current
silicon revision (A5).
A3
A5
A6
XX
X
A3
A5
A6
X
A3
A5
A6
XX
X
A3
A5
A6
X
A3
A5
A6
X
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