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参数资料
| 型号： | PIC24FJ64GB110T-I/PF |
| 厂商： | Microchip Technology |
| 文件页数： | 9/22页 |
| 文件大小： | 0K |
| 描述： | IC PIC MCU FLASH 100TQFP |
| 标准包装： | 1,000 |
| 系列： | PIC® 24F |
| 核心处理器： | PIC |
| 芯体尺寸： | 16-位 |
| 速度： | 32MHz |
| 连通性： | I²C，SPI，UART/USART，USB OTG |
| 外围设备： | 欠压检测/复位，LVD，POR，PWM，WDT |
| 输入/输出数： | 83 |
| 程序存储器容量： | 64KB（22K x 24） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 16K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 2 V ~ 3.6 V |
| 数据转换器： | A/D 16x10b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 100-TQFP |
| 包装： | 带卷 (TR) |
| 其它名称： | PIC24FJ64GB110T-I/PFTR |
2008-2011 Microchip Technology Inc.
DS80369N-page 17
PIC24FJ256GB110 FAMILY
4.
Module: Electrical Specifications
(DC Characteristics)
Table 29-3 (“DC Characteristics: Temperature
and Voltage Specifications”) is amended by add-
ing a new specification, VUSB, and an explanatory
footnote. The changes are shown below in bold
text
(bold text in original was removed for clarity).
5.
Module: Electrical Specifications
In Table 29-3 (“DC Characteristics: Temperature
and Voltage Specifications”), the Minimum and
Maximum values for DC18 (BOR Voltage on VDD
Transition) are changed to 1.90V and 2.25V,
respectively.
The
Typical
value
remains
unchanged.
TABLE 29-3:
DC CHARACTERISTICS: TEMPERATURE AND VOLTAGE SPECIFICATIONS
(PARTIAL REPRESENTATION)
DC CHARACTERISTICS
Standard Operating Conditions: 2.0V to 3.6V (unless otherwise stated)
Operating temperature
-40°C
TA +85°C for Industrial
Param
No.
Symbol
Characteristic
Min
Typ(1)
Max
Units
Conditions
Operating Voltage
VUSB
USB Supply Voltage
3.0
3.3
3.6
V
USB module enabled(3)
Note 1:
Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. Parameters are for design guidance only
and are not tested.
2:
This is the limit to which VDD can be lowered without losing RAM data.
3:
VUSB should always be maintained at VDD or greater when the USB module is enabled. The VUSB pin
may be left in a high-impedance state when the USB module is disabled and pins, RG2 and RG3,
will not be used as general purpose inputs, but doing so may result in higher IPD currents than
specified.
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