参数资料
型号: PIP201-12M
厂商: NXP SEMICONDUCTORS
元件分类: 模拟信号调理
英文描述: SPECIALTY ANALOG CIRCUIT, PQCC68
封装: 10 X 10 X 0.85 MM, PLASTIC, HVQFN-68
文件页数: 17/20页
文件大小: 333K
代理商: PIP201-12M
Philips Semiconductors
PIP201-12M
DC to DC converter powertrain
Product data
Rev. 02 — 18 July 2002
6 of 21
9397 750 09833
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9.
Thermal characteristics
10. Characteristics
[1]
If the input voltage remains between VIH and VIL (2.5 V typ) for longer than td(3-state), then both MOSFETs are turned off.
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-pcb)
thermal resistance from
junction to printed-circuit
board
-
4
5
K/W
Rth(j-a)
thermal resistance from
junction to ambient
device mounted on FR4
printed-circuit board; copper
area around device 25
× 25 mm
no thermal vias
-
25
-
K/W
with thermal vias
-
20
-
K/W
with thermal vias and forced
air cooling; airow = 0.8 ms-1
(150 LFM)
-
15
-
K/W
Rth(j-c)
thermal resistance from
junction to case
measured on upper surface of
package
-
11
-
K/W
Table 5:
Characteristics
VDDC =12V; Tj =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VDDC
control circuit supply voltage
25
°C ≤ Tj ≤ 150 °C
7
12
14
V
VIH
HIGH-level input voltage
25
°C ≤ Tj ≤ 150 °C
2.55
2.8
3.05
V
VIL
LOW-level input voltage
25
°C ≤ Tj ≤ 150 °C
1.95
2.1
2.25
V
ILI
input leakage current
0 V
≤ VI ≤ 5 V
-
0.3
1.2
mA
IDDC
control circuit supply current
fi = 0 Hz
-
1.5
3
mA
fi = 500 kHz; Figure 10
-45
60
mA
Ptot
total power dissipation
VDDO =12V; IO(AV) = 12.5 A;
fi = 500 kHz; VO = 1.6 V;
Tpcb =90 °C; Figure 6.
-
2.7
-
W
Dynamic characteristics
td(on)(IH-OH) turn-on delay time input HIGH
to output HIGH
VDDO =12V; IO(AV) = 12.5 A
-
77
85
ns
td(off)(IL-OL) turn-off delay time input LOW
to output LOW
-30
45
ns
to(r)
output rise time
-
18
25
ns
to(f)
output fall time
-
12
20
ns
td(3-state)
3-state enable delay time
115
144
173
ns
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