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| 型号： | PM100CVA120 |
| 厂商： | Powerex Inc |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 描述： | MOD IPM 6PAC 1200V 100A |
| 标准包装： | 1 |
| 系列： | Intellimod™ |
| 类型： | IGBT |
| 配置： | 三相反相器 |
| 电流： | 100A |
| 电压： | 1200V |
| 电压 - 隔离： | 2500Vrms |
| 封装/外壳： | 模块 |
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
PM100CVA120
Intellimod? Module
Three Phase IGBT Inverter Output
100 Amperes/1200 Volts
Electrical and Mechanical Characteristics, T j = 25 ° C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT Inverter Sector
Collector-Emitter Cutoff Current
FWDi Forward Voltage
Collector-Emitter Saturation Voltage
I CES
V EC
V CE(sat)
V CE = V CES , V D = 15V, T j = 25 ° C
V CE = V CES , V D = 15V, T j = 125 ° C
-I C = 100A, V D = 15V, V CIN = 15V
V D = 15V, V CIN = 0V, I C = 100A,
—
—
—
—
—
—
2.50
2.65
1.0
10.0
3.50
3.30
mA
mA
Volts
Volts
Pulsed, T j = 25 ° C
V D = 15V, V CIN = 0V, I C = 100A,
—
2.75
3.35
Volts
Pulsed, T j = 125 ° C
Inductive Load Switching Times
t on
0.4
0.9
2.3
μ S
t rr
t C(on)
t off
t C(off)
V D = 15V, V CIN = 0V ~ 15V
V CC = 600V, I C = 100A,
T j = 125 ° C
—
—
—
—
0.2
0.4
2.4
0.7
0.3
1.0
3.4
1.2
μ S
μ S
μ S
μ S
Thermal Characteristics
Characteristic
Junction to Case Thermal Resistance
Contact Thermal Resistance
Symbol
R th(j-c)Q
R th(j-c)D
R th(c-f)
Condition
Each Inverter IGBT
Each Inverter FWDi
Case to Fin Per Module,
Min.
—
—
—
Typ.
—
—
—
Max.
0.21
0.35
0.025
Units
° C/Watt
° C/Watt
° C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic
Supply Voltage
Symbol
V CC
V CE(surge)
V D
Condition
Applied across P-N Terminals
Applied across P-N Terminals
Applied between V UP1 -V UPC ,
Value
≤ 800
≤ 1000
15 ± 1.5
Units
Volts
Volts
Volts
V N1 -V NC , V VP1 -V VPC , V WP1 -V WPC *
Input ON Voltage
Input OFF Voltage
Arm Shoot-Through Blocking Time
V CIN(on)
V CIN(off)
t DEAD
Applied between
U P , V P , W P , U N, V N, W N
For IPM's each Input Signal
≤ 0.8
≥ 4.0
≥ 3.0
Volts
Volts
μ S
* With ripple satisfying the following conditions, dv/dt swing ≤ 5V/ μ s, Variation ≤ 2V peak to peak.
434
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相关代理商/技术参数 |
参数描述 |
|---|---|
| PM100CVA120_05 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM100CVA120_09 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:FLAT-BASE TYPE INSULATED PACKAGE |
| PM100CVA120-2 | 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:原装07+最新年份,欢迎来电咨询,联系13631629729 |
| PM100DHA060 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) |
| PM100DHA120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) |
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